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48N60DM2 STWA48N60DM2 MOSFET PTD High Voltage Replacement Part For PSU Power Supply
48N60DM2 STWA48N60DM2 MOSFET PTD High Voltage Replacement Part For PSU Power Supply
Specifications
Model Number :
STWA48N60DM2
Place of Origin :
Guangdong, China
Brand Name :
Original
Packaging Details :
Standard carton
Supply Ability :
1000 Piece/Pieces per Week
MOQ :
1
Price :
Negotiable
Type :
MOSFET
D/C :
New
Package Type :
Through Hole
Application :
General Purpose
Brand :
MOSFET
Power - Max :
300W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
40A (Tc)
Rds On (Max) @ Id, Vgs :
79mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
5V @ 250uA
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3250pF @ 100V
Drive Voltage (Max Rds On, Min Rds On) :
10V
Vgs (Max) :
±25V
Stock :
In Stock
Description

High Efficiency MOSFET for Demanding Converters

48N60DM2 - N-channel 600V MOSFET with Fast-recovery Body Diode

Looking for a MOSFET that can handle the most demanding high-efficiency converters? Look no further than the 48N60DM2. With its low recovery charge and time, combined with low RDS(on), this MOSFET is ideal for bridge topologies and ZVS phase-shift converters. In addition to its excellent performance, the 48N60DM2 also features extremely low gate charge and input capacitance, as well as being 100% avalanche tested.

Plus, its extremely high dv/ dt ruggedness and Zener-protection make it a reliable and safe choice. Upgrade your converter with the 48N60DM2 - the perfect choice for high efficiency and reliability. This text is meant to optimize conversion by focusing on the product's features and benefits, while using engaging language to grab the reader's attention. By highlighting the product's advantages, customers are more likely to take action and purchase the product.

Product Category

MOSFET

Technology

Si

Mounting Style

Through Hole

Package / Case

TO-247-3

Transistor Polarity

N-Channel

Number of Channels

1 Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

40 A

Rds On - Drain-Source Resistance

65 mOhms

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

70 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

300 W

Channel Mode

Enhancement

Packaging

Tube

Configuration

Single

Series

STWA48N60DM2

Transistor Type

1 N-Channel

Fall Time

9.8 ns

Product Type

MOSFET

Rise Time

27 ns

Subcategory

MOSFETs

Typical Turn-Off Delay Time

131 ns

Typical Turn-On Delay Time

27 ns

Unit Weight

0.211644 oz
Product tags

moxa 24vdc power supply

,

psre443 power panel buy

,

xantrex power supply
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48N60DM2 STWA48N60DM2 MOSFET PTD High Voltage Replacement Part For PSU Power Supply

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Product Detail
Model Number :
STWA48N60DM2
Place of Origin :
Guangdong, China
Brand Name :
Original
Packaging Details :
Standard carton
Supply Ability :
1000 Piece/Pieces per Week
MOQ :
1
Contact Supplier
48N60DM2 STWA48N60DM2 MOSFET PTD High Voltage Replacement Part For PSU Power Supply

Yougou Electronics (Shenzhen) Co., Ltd.

Verified Supplier
3 Years
shenzhen
Since 2008
Business Type :
Manufacturer, Distributor/Wholesaler, Exporter, Trading Company, Seller
Main Products :
Circular Electrical Connectors, IC Integrated Circuit Chip, Transistor IC Chip
Employee Number :
25~30
Certification Level :
Verified Supplier
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