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FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247
FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247
FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247
FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247
Specifications
Model Number :
FCH47N60F
Place of Origin :
Guangdong, China
Brand Name :
Original
Packaging Details :
Standard carton
MOQ :
1
Price :
Negotiable
Brand :
MOSFET N-CH 600V 47A TO-247
Power - Max :
417W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3
FET Type :
N-Channel
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
47A (Tc)
Rds On (Max) @ Id, Vgs :
73mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250uA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) :
10V
Vgs (Max) :
±30V
Stock :
In Stock
Description

High Performance MOSFET for Discrete Semiconductor Applications

Introducing the SuperFET FCH47N6 from onsemi in a TO-247-3 Package

Looking for a powerful and reliable MOSFET for your discrete semiconductor needs? Look no further than the SuperFET FCH47N6 from onsemi. Designed with cutting-edge MOSFET (Metal Oxide) technology, this N-Channel transistor delivers an impressive drain to source voltage of 600 V and a continuous drain current of 47A at 25°C.

With a maximum Rds On of just 70mOhm and a maximum gate charge of only 270 nC at 10V, the FCH47N6 provides exceptional efficiency, while the wide operating temperature range (-55°C to 150°C) ensures durability in even the most extreme conditions. This powerful MOSFET is compatible with through-hole mounting and comes in a TO-247-3 package. Don't miss out on the impressive power and reliability of the SuperFET FCH47N6 for discrete semiconductor applications.

Category

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single

Package

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

73mOhm @ 23.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8000 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

417W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Base Product Number

FCH47
Product tags

mosfet stw20nm50fd

,

4435 mosfet

,

transistor mosfet p3nk90zfp
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FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247

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Product Detail
Model Number :
FCH47N60F
Place of Origin :
Guangdong, China
Brand Name :
Original
Packaging Details :
Standard carton
MOQ :
1
Price :
Negotiable
Contact Supplier
FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247
FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247

Yougou Electronics (Shenzhen) Co., Ltd.

Verified Supplier
3 Years
shenzhen
Since 2008
Business Type :
Manufacturer, Distributor/Wholesaler, Exporter, Trading Company, Seller
Main Products :
Circular Electrical Connectors, IC Integrated Circuit Chip, Transistor IC Chip
Employee Number :
25~30
Certification Level :
Verified Supplier
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