Improve the performance of your Hashboard with the 2N7002 MOSFET, specially designed to enhance the functionality of 3.3V applications. With a low gate to source threshold voltage of 2.1V, this MOSFET is perfect for power management applications, enabling you to keep switching performance high and energy usage low. Its low on-state resistance ensures that it remains energy efficient while it is on.
Plus, its SMD version is incredibly convenient for small applications, with the potential to endure 200mA continuous current and 1A peaks with maximum voltage threshold. So why wait? Upgrade your Hashboard today and elevate your mining experience with the 2N7002 MOSFET!
Product Category |
MOSFET |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
SOT-23-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds - Drain-Source Breakdown Voltage |
60 V |
Id - Continuous Drain Current |
115 mA |
Rds On - Drain-Source Resistance |
1.2 Ohms |
Vgs - Gate-Source Voltage |
- 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage |
1 V |
Qg - Gate Charge |
- |
Minimum Operating Temperature |
- 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd - Power Dissipation |
200 mW |
Channel Mode |
Enhancement |
Configuration |
Single |
Height |
1.2 mm |
Length |
2.9 mm |
Product |
MOSFET Small Signal |
Series |
2N7002 |
Transistor Type |
1 N-Channel |
Width |
1.3 mm |
Forward Transconductance - Min |
0.08 S |
Product Type |
MOSFET |
Part # Aliases |
2N7002_NL |
Unit Weight |
0.000282 oz |