Enhance your electronic circuits with the STMicroelectronics BC337-40 NPN Bipolar Transistors. These high-quality through-hole transistors are designed for general-purpose applications, offering reliable and versatile performance. The BC337-40 features a single NPN configuration and comes in a TO-92-3 package, ensuring easy integration into various circuit designs. It has a maximum collector-emitter voltage (VCEO) of 45V, collector-base voltage (VCBO) of 50V, and emitter-base voltage (VEBO) of 5V.
With a maximum DC collector current of 500mA and continuous collector current of 800mA, these transistors can handle moderate power requirements. The BC337-40 has a power dissipation (Pd) of 625mW, allowing for efficient heat dissipation. These bipolar transistors exhibit a gain bandwidth product (fT) of 100MHz, enabling high-frequency applications. With a DC current gain (hFE) ranging from 250 to 600, they provide reliable amplification and switching capabilities.
The STMicroelectronics BC337-40 transistors are manufactured by a trusted brand known for its quality and reliability. They are available in bulk packaging, making them suitable for various project sizes.
Feature | Specification |
---|---|
Transistor Polarity | NPN |
Configuration | Single |
Collector-Emitter Voltage | 45 V |
Collector-Base Voltage | 50 V |
Emitter-Base Voltage | 5 V |
Maximum DC Collector Current | 500 mA |
Pd - Power Dissipation | 625 mW |
Gain Bandwidth Product fT | 100 MHz |
Maximum Operating Temperature | +150°C |
Series | BC337 |
Packaging | Bulk |
Brand | STMicroelectronics |
Continuous Collector Current | 800 mA |
DC Collector/Base Gain hfe Min | 250 |
DC Current Gain hFE Max | 600 |
Height | 4.95 mm |
Length | 4.95 mm |
Product Type | BJTs - Bipolar Transistors |