Shanghai GaNova Electronic Information Co., Ltd.
Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Menu
Menu
Supplier homepage
Product categories
Show all products
GaN Epitaxial Wafer
SiC Epitaxial Wafer
GaAs Epi Wafer
CVD Diamond Substrates
Rapid Thermal Annealing System
Hall Effect Sensor Tester
Aluminum Nitride Wafer
Laser Diode Chip
Silicon Carbide Crystal
Ga2O3 Wafer
Silicon Wafer
Sapphire Wafer
Patterned Sapphire Substrates
Wafer Holder
Wafer Dicing Machine
Company profile
Quality control
Contact us
Supplier Homepage > Products

PRODUCT CATEGORIES

GaN Epitaxial Wafer

 (68)

SiC Epitaxial Wafer

 (42)

GaAs Epi Wafer

 (15)

CVD Diamond Substrates

 (15)

Rapid Thermal Annealing System

 (2)

Hall Effect Sensor Tester

 (3)

Aluminum Nitride Wafer

 (21)

Laser Diode Chip

 (10)

Silicon Carbide Crystal

 (12)

Ga2O3 Wafer

 (13)

Silicon Wafer

 (26)

Sapphire Wafer

 (19)

Patterned Sapphire Substrates

 (10)

Wafer Holder

 (1)

Wafer Dicing Machine

 (5)
Product Categories

All Products

262
Choose from our all products, find out more, and feel free to inquiry us
2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
video
GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
Model：JDCD01-001-021
Certification：UKAS/ISO9001:2015
Contact Now
Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um
SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um
Model：JDCD03-002-007
Certification：UKAS/ISO9001:2015
Contact Now
Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
video
GaN Epitaxial Wafer

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
Model：JDCD01-001-021
Certification：UKAS/ISO9001:2015
Contact Now
6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
SiC Epitaxial Wafer

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
Model：JDCD03-002-007
Certification：UKAS/ISO9001:2015
Contact Now
2 inch Free-standing SI-GaN Substrates
video
GaN Epitaxial Wafer

2 inch Free-standing SI-GaN Substrates
Model：JDCD01-001-021
Certification：UKAS/ISO9001:2015
Contact Now
4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
SiC Epitaxial Wafer

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
Model：JDCD03-002-007
Certification：UKAS/ISO9001:2015
Contact Now
Gallium Nitride Semiconductor Wafer 325um 375um C Plane
video
GaN Epitaxial Wafer

Gallium Nitride Semiconductor Wafer 325um 375um C Plane
Model：JDCD01-001-021
Certification：UKAS/ISO9001:2015
Contact Now
P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm
SiC Epitaxial Wafer

P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm
Model：JDCD03-002-005
Certification：UKAS/ISO9001:2015
Contact Now
375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates
video
GaN Epitaxial Wafer

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates
Model：JDCD01-001-019
Certification：UKAS/ISO9001:2015
Contact Now
4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm
SiC Epitaxial Wafer

4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm
Model：JDCD03-002-008
Certification：UKAS/ISO9001:2015
Contact Now
2 Inch U GaN Substrates SI GaN Substrates 50.8mm
video
GaN Epitaxial Wafer

2 Inch U GaN Substrates SI GaN Substrates 50.8mm
Model：JDCD01-001-019
Certification：UKAS/ISO9001:2015
Contact Now
150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
SiC Epitaxial Wafer

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
Model：JDCD03-002-006
Certification：UKAS/ISO9001:2015
Contact Now
150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm
video
SiC Epitaxial Wafer

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm
Model：JDCD03-001-003
Certification：UKAS/ISO9001:2015
Contact Now
Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type
GaN Epitaxial Wafer

Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type
Model：JDCD01-001-019
Certification：UKAS/ISO9001:2015
Contact Now
N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
SiC Epitaxial Wafer

N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
Model：JDCD03-002-009
Certification：UKAS/ISO9001:2015
Contact Now
50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
GaN Epitaxial Wafer

50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing
Model：JDCD01-001-019
Certification：UKAS/ISO9001:2015
Contact Now
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1°
video
SiC Epitaxial Wafer

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
Model：JDCD03-001-003
Certification：UKAS/ISO9001:2015
Contact Now
Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um
GaN Epitaxial Wafer

Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um
Model：JDCD01-001-019
Certification：UKAS/ISO9001:2015
Contact Now
6inch 4H SiC Substrate N Type P SBD Grade 350μm
SiC Epitaxial Wafer

6inch 4H SiC Substrate N Type P SBD Grade 350μm
Model：JDCD03-002-008
Certification：UKAS/ISO9001:2015
Contact Now
SP Face 5 X 10mm2 Gallium Nitride Substrate 350um
GaN Epitaxial Wafer

SP Face 5 X 10mm2 Gallium Nitride Substrate 350um
Model：JDCD01-001-018
Certification：UKAS/ISO9001:2015
Contact Now
View More
Contact Supplier
Submit Requirement