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M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um
M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um
Specifications
Brand Name :
GaNova
Model Number :
JDCD01-001-007
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name :
GaN Substrate
Dimensions :
5 x 10.5mm²
Thickness :
350 ±25µm
TTV :
≤ 10µm
BoW :
- 10µm ≤ BOW ≤ 10µm
Macro Defect Density :
0cm⁻²
Description

5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer


Overview

Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality.

Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits several characteristics that make it better than GaAs and Silicon for various high power components. These characteristics include a higher breakdown voltage and better electrical resistivity.

M face Free-standing GaN Substrates
Item

GaN-FS-M-U-S

GaN-FS-M-N-S

 GaN-FS-M-SI-S

M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.
Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

M plane (1- 100) off angle toward A-axis 0 ±0.5°

M plane (1- 100) off angle toward C-axis - 1 ±0.2°
Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished)；

or < 0.3 nm (polished and surface treatment for epitaxy)
Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

Appendix: The diagram of miscut angle

M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um

If δ1= 0 ±0.5 degree, then M plane (1- 100) off angle toward A-Axis is 0 ±0.5 degree.

If δ2= - 1 ±0.2 degree, then M plane (1- 100) off angle toward C-Axis is - 1 ±0.2 degree.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

devant lcd panel

,

6.5 oled screen component

,

p3 led wall resolution
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M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD01-001-007
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Contact Supplier
M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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