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5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate
5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate
Specifications
Brand Name :
GaNova
Model Number :
JDCD01-001-018
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name :
Free-Standing GaN Single Crystal Substrate
Dimensions :
5 x10mm²
Thickness :
350 ±25µm
TTV :
≤ 10µm
BoW :
- 10µm ≤ BOW ≤ 10µm
Dislocation Density :
From 1 x 10⁵to 3 x 10⁶cm⁻²
Description

5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer


Overview
Different Types of Generative Adversarial Networks (GANs)

DC GAN – It is a Deep convolutional GAN. ...
Conditional GAN and Unconditional GAN (CGAN) – Conditional GAN is deep learning neural network in which some additional parameters are used.

(20-21)/(20-2-1) face Free-standing GaN Substrates
Item

GaN-FS-SP-U-S

GaN-FS-SP-N-S

 GaN-FS-SP-SI-S

5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.
Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

(20-21)/(20-2- 1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2- 1) plane off angle toward C-axis - 1 ±0.2°
Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished)；

or < 0.3 nm (polished and surface treatment for epitaxy)
Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

Appendix: The diagram of miscut angle

5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

If δ1= 0 ±0.5°, then (20-21)/(20-2- 1) plane off angle toward A-Axis is 0 ±0.5°.

If δ2= - 1 ±0.2°, then (20-21)/(20-2- 1) plane off angle toward C-Axis is - 1 ±0.2°.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

gan semiconductor

,

gan wafer

,

papan led pcb
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5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD01-001-018
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Contact Supplier
video
5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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