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Un Doped GaN Epitaxial Wafer M Face Free Standing GaN Substrates
Un Doped GaN Epitaxial Wafer M Face Free Standing GaN Substrates
Specifications
Brand Name :
GaNova
Model Number :
JDCD01-001-007
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name :
Free-Standing GaN Substrate
Dimensions :
5 x 10 mm²
Thickness :
350 ±25µm
TTV :
≤ 10µm
BoW :
- 10µm ≤ BOW ≤ 10µm
Macro Defect Density :
0cm⁻²
Description

5 X 10 mm2 M Face Free-Standing GaN Substrates 350 ±25 µm TTV ≤ 10 µm

5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer


Overview
GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epitaxial growth has been achieved.

Laser diodes: violet LD, blue LD, and green LD
Power electronic devices, High frequency electronic devices

M face Free-standing GaN Substrates
Item

GaN-FS-M-U-S

GaN-FS-M-N-S

 GaN-FS-M-SI-S

Un Doped GaN Epitaxial Wafer M Face Free Standing GaN Substrates

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.
Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

M plane (1- 100) off angle toward A-axis 0 ±0.5°

M plane (1- 100) off angle toward C-axis - 1 ±0.2°
Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished)；

or < 0.3 nm (polished and surface treatment for epitaxy)
Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

Appendix: The diagram of miscut angle

Un Doped GaN Epitaxial Wafer M Face Free Standing GaN Substrates

If δ1= 0 ±0.5 degree, then M plane (1- 100) off angle toward A-Axis is 0 ±0.5 degree.

If δ2= - 1 ±0.2 degree, then M plane (1- 100) off angle toward C-Axis is - 1 ±0.2 degree.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

led pixel wall

,

600x600 led panel surface

,

led pixel panel
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Un Doped GaN Epitaxial Wafer M Face Free Standing GaN Substrates

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD01-001-007
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Contact Supplier
Un Doped GaN Epitaxial Wafer M Face Free Standing GaN Substrates

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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