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Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um
Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um
Specifications
Brand Name :
GaNova
Model Number :
JDCD01-001-020
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name :
2-inch Free-standing N-GaN Substrates
Dimensions :
50.0 ±0.3mm
Item :
GaN-FS-C-N-C50-SSP
Thickness :
400 ± 30μm
N face surface roughness :
0.5 ~1.5μm (single side polished)
Orientation flat :
(1- 100) ±0.1˚, 12.5 ± 1mm
Description

2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished)

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer


Overview
These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power devices for use in projector light sources, inverters for electric vehicles, and other applications.
Gallium nitride can also be synthesized by injecting ammonia gas into molten gallium at 900-980 °C at normal atmospheric pressure.

2-inch Free-standing N-GaN Substrates

Production level(P)

Research(R)

Dummy(D)

Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

Note:

(1) 5 points: the miscut angles of 5 positions are 0.55 ±0.15o

(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.55 ±0.15o

(3) Useable area: exclusion of periphery and macro defects (holes)
P+ P P-
Item GaN-FS-C-N-C50-SSP
Dimensions 50.0 ±0.3 mm
Thickness 400 ± 30 μm
Orientation flat (1- 100) ±0.1o, 12.5 ± 1 mm
TTV ≤ 15 μm
BOW ≤ 20 μm
Resistivity (300K) ≤ 0.02 Ω·cm for N-type (Si-doped)
Ga face surface roughness ≤ 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness 0.5 ~1.5 μm (single side polished)
C plane (0001) off angle toward M-axis(miscut angles)

0.55 ± 0.1o

(5 points)

0.55± 0.15o

(5 points)

0.55 ± 0.15o

(3 points)
Threading dislocation density ≤ 7.5 x 105 cm-2 ≤ 3 x 106 cm-2
Number and max size of holes in Ф47 mm in the center 0 ≤ 3@1000 μm ≤ 12@1500 μm ≤ 20@3000 μm
Useable area > 90% >80% >70%
Package Packaged in a cleanroom in single wafer container

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

double sided pcb etching

,

copper etching pcb

,

n5 surface finish
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Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD01-001-020
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Contact Supplier
Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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