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10 X 10.5 mm2 Free-Standing GaN Substrates - 10 µm ≤ BOW ≤ 10 µm
10 X 10.5 mm2 Free-Standing GaN Substrates - 10 µm ≤ BOW ≤ 10 µm
Specifications
Brand Name :
GaNova
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Model Number :
JDCD01-001-001
Product Name :
GaN Epitaxial Wafer
Dimensions :
10 x 10.5mm²
Thickness :
350 ±25µm
Orientation :
C plane (0001) off angle toward M-axis 0.35 ±0.15°
TTV :
≤ 10µm
BoW :
- 10µm ≤ BOW ≤ 10µm
Description

10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser

Applications

Laser diodes: violet LD, blue LD, and green LD
Power electronic devices, High frequency electronic devices

More than 10 years of wafer fabrication technology experience with GaAs substrates has been applied to the GaN substrate production. GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epitaxial growth has been achieved.

10 x 10.5 mm2 Free-standing GaN Substrates
Item GaN-FS-C-U-S10 GaN-FS-C-N-S10 GaN-FS-C-SI-S10

10 X 10.5 mm2 Free-Standing GaN Substrates - 10 µm ≤ BOW ≤ 10 µm

Remarks:
A circular arc angle (R < 2 mm) is used for distinguishing the Ga and N face.
Dimensions 10 x 10.5 mm2
Thickness 350 ±25 µm
Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type N-type N-type Semi-Insulating
Resistivity(300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BoW - 10 µm ≤ BOW ≤ 10 µm
Ga Face Surface Roughness < 0.2 nm (polished)
or < 0.3 nm (polished and surface treatment for epitaxy)
N Face Surface Roughness 0.5 ~1.5 μm
option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density From 1 x 105 to 3 x 106 cm-2 (calculated by CL)*
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

*National standards of China (GB/T32282-2015)

10 X 10.5 mm2 Free-Standing GaN Substrates - 10 µm ≤ BOW ≤ 10 µm

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

gan wafer

,

dip led pcb

,

led screen smd p3mm
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10 X 10.5 mm2 Free-Standing GaN Substrates - 10 µm ≤ BOW ≤ 10 µm

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Product Detail
Brand Name :
GaNova
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Contact Supplier
10 X 10.5 mm2 Free-Standing GaN Substrates - 10 µm ≤ BOW ≤ 10 µm

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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