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5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
Specifications
Brand Name :
GaNova
Model Number :
JDCD01-001-006
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Dimensions :
5 x 10mm²
Thickness :
350 ±25µm
TTV :
≤ 10µm
BoW :
- 10µm≤ BOW ≤10µm
Macro Defect Density :
0cm⁻²
Useable Area :
> 90% (edge exclusion)
Description

5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer


Overview
Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial wafers are used for the devices mainly to control electric power, and they are contributing to improving the efficiency of energy consumption.

Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality.

These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power devices for use in projector light sources, inverters for electric vehicles, and other applications.

A face Free-standing GaN Substrates
Item GaN-FS-A-U-S

GaN-FS-A-N-S

 GaN-FS-A-SI-S

5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices WaferRemarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.
Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

A plane (11-20) off angle toward M-axis 0 ±0.5°

A plane (11-20) off angle toward C-axis - 1 ±0.2°
Conduction Type N-type

N-type

 Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished);

or < 0.3 nm (polished and surface treatment for epitaxy)
Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

Appendix: The diagram of miscut angle

5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer

If δ1= 0 ±0.5°, then A plane (11-20) off angle toward M-Axis is 0 ±0.5°.

If δ2= - 1 ±0.2°, then A plane (11-20) off angle toward C-Axis is - 1 ±0.2°.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

cob smd led chip

,

aluminum base led mcpcb

,

gaas substrate
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5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD01-001-006
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Contact Supplier
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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