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2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
Specifications
Brand Name :
Nanowin
Model Number :
JDCD01-001-021
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Dimensions :
50.8 ± 1mm
Thickness :
350 ± 25μm
Orientation flat :
(1-100) ± 0.5˚, 16 ± 1mm
Secondary orientation flat :
(11-20) ± 3˚, 8 ± 1mm
TTV :
≤ 15μm
BOW :
≤ 20μm ≤ 40μm
Description

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices

Overview

Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. We offer GaN on SiC wafers for RF and Power applications.

2-inch Free-standing U-GaN/SI-GaN Substrates

Excellent level (S)

Production level(B)

Research

level (B)

Dummy

level (C)

2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices

Note:

(1) Useable area: edge and macro defects exclusion

(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o
S-1 S-2 A-1 A-2
Dimensions 50.8 ± 1 mm
Thickness 350 ± 25 μm
Orientation flat (1-100) ± 0.5o, 16 ± 1 mm
Secondary orientation flat (11-20) ± 3o, 8 ± 1 mm
Resistivity (300K)

< 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50)

or > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50)
TTV ≤ 15 μm
BOW ≤ 20 μm ≤ 40 μm
Ga face surface roughness

< 0.2 nm (polished)

or < 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)
Package Packaged in a cleanroom in single wafer container
Useable area > 90% >80% >70%
Dislocation density <9.9x105 cm-2 <3x106 cm-2 <9.9x105 cm-2 <3x106 cm-2 <3x106 cm-2
Orientation:C plane (0001) off angle toward M-axis

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)
Macro defect density (hole) 0 cm-2 < 0.3 cm-2 < 1 cm-2
Max size of macro defects < 700 μm < 2000 μm < 4000 μm

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

cob smd led chip

,

gaas substrate

,

aluminum base led mcpcb
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2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices

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Product Detail
Brand Name :
Nanowin
Model Number :
JDCD01-001-021
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
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2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices
2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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