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Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate
Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate
Specifications
Brand Name :
GaNova
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
MOQ :
1
Payment Terms :
T/T
Supply Ability :
50000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Model Number :
JDCD06-001-002
Grade :
Prime
Growth Method :
CZ
Type/Dopant :
P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
Thickness(μm) :
279
Thickness Tolerance :
Standard ± 25μm,Maximum Capabilities ± 5μm
Resistivity :
0.001-100 ohm-cm
Surface Finished :
P/E,P/P,E/E,G/G
TTV(μm) :
Standard <10μm,Maximum Capabilities<5μm
Description

Thickness(μm)279 Silicon Wafer TTV(μm) Standard <10 um,Maximum Capabilities<5 μm

2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices


Overview

Silicon (Si) wafers are primary substrate materials in the microelectronic and microelectromechanical area because of its superior properties, which can be adjusted. In this chapter, we first provide an overview of the electrical discharge machining techniques. In addition, the capability and performance results of electrical discharge machining techniques for machining three-dimensional cavities on Si with optimum parameter settings are also discussed.

Specification

silicon wafer

Diameter

 2"/3"/4"/5"/6"/8"/12"
Grade Prime
Growth Method CZ
Orientation <1-0-0>,<1-1-1>,<1-1-0>
Type/Dopant P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
Thickness(μm) 279/380/525/625/675/725/775
Thickness Tolerance Standard ± 25μm,Maximum Capabilit/ies ± 5μm
Resistivity 0.001-100 ohm-cm
Surface Finished P/E,P/P,E/E,G/G
TTV(μm) Standard <10μm,Maximum Capabilities<5 μm
Bow/Warp Standard <40 μm,Maximum Capabilities<20 μm
Particle <10@0.5μm; <10@0.3μm; <10@0.2μm;

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

n type silicon wafer

,

what is silicon wafer

,

p type silicon wafer
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Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate

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Product Detail
Brand Name :
GaNova
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
MOQ :
1
Payment Terms :
T/T
Supply Ability :
50000pcs/month
Contact Supplier
Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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