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1inch AlN Single Crystal Aluminum Nitride Wafer 400μm S / P / R Grade
1inch AlN Single Crystal Aluminum Nitride Wafer 400μm S / P / R Grade
Specifications
Brand Name :
GaNova
Model Number :
JDCD02-001-001
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name :
Aluminum Nitride Wafer
Diameter :
25.4±0.5mm
Thickness :
400±50μm
Crystal Form :
2H
Polytype :
{0001}±0.5°
TUA :
≥90%
Description

JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade

AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to alumina substrate , It is about 7 to 8 times high . AlN substrate is an excellent electronic package material .

1inch Aluminum nitride single crystal substrate
Crystal Specifications Parameter value
Diameter(mm) 25.4±0.5
Thickness(μm) 400±50
Crystal Form 2H
Polytype {0001}±0.5°
Surface polishing Aluminum surface: chemical polishing (double polishing can be customized)
Roughness

Al face:≤0.5nm

N face(back):≤1.2μm
appearance Circular belt positioning edge
Quality grade S grade(Super) P grade(Prouduction) R grade(Research)
HRXRD Half height width@{0002}(arcsec) ≤150 ≤300 ≤500
HRXRD Half height width@{10-12}(arcsec) ≤100 ≤200 ≤400
absorption coefficient@265nm(cm-1) ≤50 ≤70 ≤100
Edge Exclusion(mm) 1 1 1
Indents / / /
Chips / / ≤3 Cumulative ≤1.0mm
TUA ≥90%
Main positioning edge orientation {10-10}±5.0°
Orientation of secondary locating surface

Al face:Rotate clockwise in the direction of the main positioning edge90°±5°

N face:Rotate counterclockwise in the direction of the main positioning edge90°±5°
TTV(μm) ≤30
Warp(μm) ≤30
Bow(μm) ≤30
Cracks No, naked eye, strong light
Contamination No, naked eye, radiation
Laser coding N face,Parallel to the main locating edge
Package Monolithic wafer box

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

germanium wafer

,

gallium arsenide wafer

,

gallium nitride wafer
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1inch AlN Single Crystal Aluminum Nitride Wafer 400μm S / P / R Grade

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD02-001-001
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Contact Supplier
1inch AlN Single Crystal Aluminum Nitride Wafer 400μm S / P / R Grade

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
4 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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