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AIN On Aluminum Nitride Wafer Roughness Ra
AIN On Aluminum Nitride Wafer Roughness Ra
Specifications
Brand Name :
GaNova
Model Number :
JDWY01-001-003
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Thickness :
[1,2)μm,[2,3)μm,[3,4)μm,[4,5)μm
Orientation :
C-plane (0001)±1˚
Conduction Type :
Semi-Insulating
Edge Exclusion Zone :
<2mm
Product Name :
Aluminum Nitride Wafer
XRD FWHM of(102) :
≤650arcsec, ≤550arcsec, ≤450arcsec, ≤400arcsec
Description

C-Plane (0001)±1o AIN On Sapphire Wafer Surface Roughness Ra<1.5nm(10*10μm)

2 Inch Thick Film (2,3)μm AIN On Sapphire Wafer,SSP,XRD FWHM Of(002)≤100arcsec(102) ≤550arcsec UV Disinfection LED Chip

Overview

Besides its good thermal conductivity, Aluminum Nitride is also a good electrical insulator. It can be used in a wide variety of applications requiring superior electrical insulation. It is also known for its ability to resist corrosion. While most of the common uses of Aluminum nitride are in the electronics industry, it is increasingly found in the microelectronics field. In microelectronics, it is particularly useful due to its high thermal conductivity, which is unusual for an electrical insulator.

Specification

Item AlN-T-C-U-C50
Dimensions φ50.8 mm±0.1 mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0 mm
Substrate Sapphire(Single or Double Side Polished)
Thickness 1~5μm
Orientation

C-plane (0001)±1o
Conduction Type Semi-Insulating
Crystalline Quality Thickness XRD FWHM of(002) XRD FWHM of(102)
[1,2)μm ≤80arcsec ≤650arcsec
[2,3)μm ≤100arcsec ≤550arcsec
[3,4)μm ≤120arcsec ≤450arcsec
[4,5)μm ≤160arcsec ≤400arcsec
Edge Exclusion Zone

<2mm
Surface Roughness Ra<1.5nm(10*10μm)
Package Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

bosch aluminium profile

,

rockwell e scale aluminum

,

sic wafer
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AIN On Aluminum Nitride Wafer Roughness Ra<1.5nm

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Product Detail
Brand Name :
GaNova
Model Number :
JDWY01-001-003
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Contact Supplier
AIN On Aluminum Nitride Wafer Roughness Ra

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
4 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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