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ALN 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade
ALN 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade
Specifications
Brand Name :
GaNova
Model Number :
JDCD02-001-004
MOQ :
1
Payment Terms :
T/T
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Diameter :
10mmx10mm
Thickness（μm） :
400±50
Crystal Form :
2H
Polytype :
{0001}±0.5°
Roughness :
Al face：≤0.5nm N face(back)：≤1.2μm
Surface polishing :
Aluminum surface: chemical polishing (double
Description

AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to alumina substrate , It is about 7 to 8 times high . AlN substrate is an excellent electronic package material .

A thin film of aluminum nitride is a layer of aluminum that is resistant to high temperatures. During high temperatures, this layer of aluminum will help protect the material. In high-pressure environments, it can be unstable. It can withstand a range of temperatures up to 980degC. At lower levels, it can be toxic to humans. It is also used in mobile phones. Its properties are extremely diverse.

10*10mm2 Aluminum nitride single crystal substrate
Crystal Specifications Parameter value
Diameter(mm) 10x10
Thickness(μm) 400±50
Crystal Form 2H
Polytype {0001}±0.5°
Surface polishing Aluminum surface: chemical polishing (double polishing can be customized)
Roughness

Al face:≤0.5nm

N face(back):≤1.2μm
appearance square shape
Quality grade S grade(Super) P grade(Prouduction) R grade(Research)
HRXRD Half height width@{0002}(arcsec) ≤150 ≤300 ≤500
HRXRD Half height width@{10-12}(arcsec) ≤100 ≤200 ≤400
absorption coefficient@265nm(cm-1) ≤50 ≤70 ≤100
Edge Exclusion(mm) 1 1 1
Indents 无 无 无
Chips 无 无 ≤3 Cumulative ≤1.0mm
TUA ≥90%
TTV(μm) ≤30
Warp(μm) ≤30
Bow(μm) ≤30

Cracks

 No, naked eye, strong light
Contamination No, naked eye, radiation
package Monolithic wafer box

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Tag:

Sapphire Aluminum Nitride Wa,

Aluminum Nitride Wafer ISO,

polished sapphire wafers

Product tags

c17200 beryllium copper alloy

,

silicon metal grade 553

,

cesium metal
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ALN 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD02-001-004
MOQ :
1
Payment Terms :
T/T
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Diameter :
10mmx10mm
Contact Supplier
ALN 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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