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JDCD05-001-006 10*10mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content
JDCD05-001-006 10*10mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content
Specifications
Brand Name :
GaNova
Model Number :
JDCD05-001-006
Payment Terms :
T/T
Supply Ability :
5000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Density(g/cm3) :
3.515
Young’s modulus(PGa) :
1050
Product Name :
CVD Diamond Substrates
Fracture toughness(MPa·m1/2) :
1~8
Firction coefficient :
0.1
Thermal conductivity(300K,Wm·K) :
1000~2000
Rerfractive index(590nm) :
2.4
Light transmittance :
225nm to far infrared
Description

JDCD05-001-006 10*10mm2*0.5mm electronic grade single crystal diamond,N content<100ppb, XRD<0.015º Thermal conductivity 1000-2200 for heat sink

Overview

CVD diamond has long been recognized as the ultimate material in a wide variety of applications due to its extreme qualities.

For diamond CVD atomic hydrogen plays a key role. It is obtained by dissociating hydrogen molecules (H2). So, what we need is a process gas that consists mainly of hydrogen (>90 %) and a gas activation, e.g. an intense plasma or a hot filament, to break up the hydrogen molecules. Atomic hydrogen is known to selectively etch graphite and to break up double bonds thus converting graphitic bonds into diamond bonds.

Specification

properties Synthetic diamond
Density(g/cm3) 3.515 Intrinsic properties
Young’s modulus(GaP) 1050

Mechanical property
Hardness(GaP)

70~120single crystal

60~100 polycrystalline
Breaking strength

2.5-3GPasingle crystal

200-1100MPa polycrystalline
Fracture toughness(MPa·m1/2) 1~8
Firction coefficient 0.1
Thermal conductivity(300K,Wm·K) 1000~2200 Thermal properties
Coefficient of thermal expansion(×10-6/℃) 1(room temperature)
Rerfractive index(590nm) 2.4 Optical properties
Light transmittance 225nm to far infrared
Band gap width(ev) 5.47 Electrical properties
Resistivity(Ω·cm) ＞1010
Electron mobility(cm2/V·S) 4500
Hole mobility(cm2/V·S) 3800
Dielectric constant 5.5 Dielectric properties
Dielectric losses ＜2×10-4

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

atomic number tungsten

,

tungsten element

,

germanium semiconductor
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JDCD05-001-006 10*10mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º Thermal Conductivity

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD05-001-006
Payment Terms :
T/T
Supply Ability :
5000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Contact Supplier
JDCD05-001-006 10*10mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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