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150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
Specifications
Brand Name :
GaNova
Model Number :
JDCD03-002-006
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name :
Sic Epitaxial Wafer
Crystal form :
4H
Diameter :
150.0mm+0.0/-0.2mm
Surface orientation :
{0001}±0.2°
Length of main reference edge :
Notch
Length of secondary reference edge :
No sub-reference edges
Description

6inch 4H-SiC substrate D-level SI-Type 350.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices

Overview

Sized for improved production
With the 150 mm wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.

6inch 4H-SiC Semi insulating substrate
Product performance P D
Crystal form 4H
Polytypic Not allow Area≤5%
Micropipe Densitya ≤0.5/cm2 ≤5/cm2
Six square empty Not allow Area≤5%
Hexagon surface hybrid crystal Not allow
wrappage a Area≤0.05% N/A
Resistivity ≥1E9Ω·cm ≥1E5Ω·cm

(0004)XRD

Half height width of rocking curve(FWHM)

≤45 Arcsecond

N/A
Diameter 150.0mm+0.0/-0.2mm
Surface orientation {0001}±0.2°
Length of main reference edge Notch
Length of secondary reference edge No sub-reference edges
Notch orientation <1-100>±1°
Notch angle 90° +5°/-1°
Notch degree of depth From the edge 1mm +0.25mm/-0mm
surface preparation C-Face: Mirror Finish, Si-Face: Chemical Mechanical Polishing (CMP)
The edge of the wafer wafer edge chamfer

Surface roughness(10μm×10μm)

Si face Ra≤0.2 nm C-Face Ra≤0.5 nm
thickness

350.0μm±25.0μm
LTV(10mm×10mm)a

≤2µm

≤3µm
TTVa

≤6µm

≤10µm
Bowa

≤25µm

≤40µm
Warpa

≤40µm

≤60µm
Broken edge / gap Collapse edges of a length and a width of ≥0.5mm are not allowed ≤2 and each length and width of ≤1.0mm
scratcha ≤5And the total length is≤ 0.5 times the diameter ≤5 ,And the total length is≤1.5 times the diameter
flaw not allow
pollution not allow
Edge removal

3mm

Remark: 3mm edge exclusion is used for the items marked with a.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

insb wafer

,

aluminium profile system

,

aluminum c channel extrusion
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150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD03-002-006
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Contact Supplier
150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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