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4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
Specifications
Brand Name :
GaNova
Model Number :
JDCD03-002-007
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name :
SiC Epitaxial Wafer
Crystal Form :
4H
Wafer Edge :
Beveling
Diameter :
150.0mm +0mm/-0.2mm
Surface Orientation :
Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length :
47.5mm ± 1.5mm
Description

JDCD03-001-004 SiC Epitaxial Wafer Wafer Edge Beveling 350.0μm± 25.0 μm

JDCD03-001-004

Overview

Several methods of growing the epitaxial layer on existing silicon or other wafers are currently used: metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), LPE, HVPE.

It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material. The lattice structure and orientation or lattice symmetry of the thin film material is identical to that of the substrate on which it is deposited. Most importantly, if the substrate is a single crystal, then the thin film will also be a single crystal. Contrast with self-assembled monolayer and mesotaxy.

Property P-MOS Grade P-SBD Grade D Grade
Crystal Form 4H
Polytype None Permitted Area≤5%
(MPD) a ≤0.2 /cm2 ≤0.5 /cm2 ≤5 /cm2
Hex Plates None Permitted Area≤5%
Hexagonal Polycrystal None Permitted
Inclusions a Area≤0.05% Area≤0.05% N/A
Resistivity 0.015Ω•cm—0.025Ω•cm 0.015Ω•cm—0.025Ω•cm 0.014Ω•cm—0.028Ω•cm
(EPD)a ≤4000/cm2 ≤8000/cm2 N/A
(TED)a ≤3000/cm2 ≤6000/cm2 N/A
(BPD)a ≤1000/cm2 ≤2000/cm2 N/A
(TSD)a ≤600/cm2 ≤1000/cm2 N/A
Stacking Fault ≤0.5% Area ≤1% Area N/A

Surface Metal Contamination

(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2
Diameter 150.0 mm +0mm/-0.2mm
Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5 mm ± 1.5 mm
Secondary Flat Length No Secondary Flat
Primary Flat Orientation Parallel to<11-20>±1°
Secondary Flat Orientation N/A
Orthogonal Misorientation ±5.0°
Surface Finish C-Face:Optical Polish,Si-Face:CMP
Wafer Edge Beveling

Surface Roughness

(10μm×10μm)

 Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm
Thickness a 350.0μm± 25.0 μm
LTV(10mm×10mm)a ≤2μm ≤3μm
(TTV)a ≤6μm ≤10μm
(BOW) a ≤15μm ≤25μm ≤40μm
(Warp) a ≤25μm ≤40μm ≤60μm
Chips/Indents None Permitted ≥0.5mm Width and Depth Qty.2 ≤1.0 mm Width and Depth

Scratches a

(Si Face,CS8520)

 ≤5 and Cumulative Length≤0.5×Wafer Diameter

≤5 and Cumulative Length≤1.5×Wafer

Diameter
TUA(2mm*2mm) ≥98% ≥95% N/A
Cracks None Permitted
Contamination None Permitted
Property P-MOS Grade P-SBD Grade D Grade
Edge Exclusion 3mm

Remark: 3mm edge exclusion is used for the items marked with a.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

silicon carbide wafer

,

standard tungsten carbide edges

,

structure of silicon carbide
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4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD03-002-007
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Contact Supplier
4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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