Specifications
Brand Name :
GaNova
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Crystal Form :
4H
Product Name :
2inch diameterSilicon Carbide (SiC)Substrate Specification
Diameter :
50.8mm±0.38mm
Primary Flat Orientation :
{10-10}±5.0°
Primary Flat Length :
47.5mm ± 1.5mm
Secondary Flat Orientation :
Silicon face up:90°CW. from Prime flat±5.0°
Micropipe Density :
≤5cm-²
Thickness a :
260μm±25μm
Description

P-Level 2-Inch SiC Substrate 4H-N/SI<0001>260μm±25μm For Demanding Power Electronics

JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices

Overview

High crystal quality for demanding power electronics
As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade portfolio of 4H n -type silicon carbide (SiC) wafers.

2inch diameterSilicon Carbide (SiC)Substrate Specification
Grade Production Grade(P Grade)
Dimeter 50.8mm±0.38mm
Thickness 260μm±25μm
Wafer Orientation On axis: <0001>±0.5° for 4H-N/4H-SI, Off axis: 4.0° toward <1120 > ±0.5° for 4H-N/4H-SI
Micropipe Density ≤5cm-²
Resistivity 4H-N 0.015~0.028Ω·cm
4H-SI >1E5Ω·cm
Primary Flat Orientation {10-10}±5.0°
Primary Flat Length 15.9mm±1.7mm
Primary Flat Length 8.0 mm±1.7 mm
Secondary Flat Orientation Silicon face up:90°CW. from Prime flat±5.0°
Edge Exclusion 1mm
TTV/Bow/Warp ≤15μm/≤25μm/≤25μm
Roughness Silicon face CMP Ra≤0.5nm
Carbon face Polish Ra≤1.0nm
Edge Cracks By High Intensity Light None
Hex Plates By High Intensity Light Cumulative area≤1%
Polytype Areas By High Intensity Light None
Silicon Surface Scratches By high Intensity Light 3 scratches to 1 x wafer diameter cumulative length
Edge Chips High By Intensity Light light None
Silicon Surface Contamination By High Intensity None
Packaging Multi-wafer Cassette or Single Wafer Container

Remark: 3mm edge exclusion is used for the items marked with a.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

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2 Inch SiC Substrate 350μm For Demanding Power Electronics

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Brand Name :
GaNova
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
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2 Inch SiC Substrate 350μm For Demanding Power Electronics

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Employee Number :
>100
Certification Level :
Verified Supplier
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