Specifications
Brand Name :
GaNova
Model Number :
JDCD03-001-007
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name :
6 inch diameter Silicon Carbide (SiC) Substrate Specification
Primary Flat Orientation :
{10-10}±5.0°
Crystal Form :
4H
Primary Flat Length :
47.5 mm±2.0 mm
Diameter :
149.5mm~150.0mm
Wafer Orientation :
Off axis:4.0°toward <1120>±0.5°for 4H-N,On axis:<0001>±0.5°for 4H-SI
Description

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP

Overview

A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. The other type is a type of insulator.

The temperature range is extremely important for electrical and magnetic fields in power semiconductors. A silicon carbide wafer is conductive in both directions.

6 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade Zero MPD Production Grade (Z Grade) Dummy Grade (D Grad)
Diameter 149.5mm~150.0mm
Thickness 4H-N 350μm±20μm 350μm±25μm
4H-SI 500μm±20μm 500μm±25μm
Wafer Orientation Off axis:4.0°toward <1120>±0.5°for 4H-N,On axis:<0001>±0.5°for 4H-SI
Micropipe Density 4H-N ≤0.5cm-² ≤15cm-²
4H-SI ≤1cm-² ≤15cm-²
Resistivity 4H-N 0.015~0.025Ω·cm 0.015~0.028Ω·cm
4H-SI ≥1E9Ω·cm ≥1E5Ω·cm
Primary Flat Orientation {10-10}±5.0°
Primary Flat Length 4H-N 47.5 mm±2.0 mm
4H-SI Notch
Edge Exclusion 3mm
LTV/TTV/Bow /Warp ≤3μm/≤6μm/≤30μm/≤40μm ≤5μm/≤15μm/≤40μm/≤60μm
Roughness Silicon face CMP Ra≤0.2nm Ra≤0.5nm
Carbon face Polish Ra≤1.0nm
Edge Cracks By High Intensity Light None Cumulative length ≤ 20 mm, single length≤2 mm
※ Hex Plates By High Intensity Light Cumulative area≤0.05% Cumulative area≤0.1%
※Polytype Areas By High Intensity Light None Cumulative area≤3%
Visual Carbon Inclusions Cumulative area≤0.05% Cumulative area≤3%
Silicon Surface Scratches By High Intensity Light None Cumulative length≤1×wafer diameter
Edge Chips By High Intensity Light None permitted ≥0.2 mm width and depth 5 allowed, ≤1 mm each
Silicon Surface Contamination by High Intensity Light None
Packaging Multi-wafer Cassette or Single Wafer Container

Remark: 3mm edge exclusion is used for the items marked with a.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

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0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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Brand Name :
GaNova
Model Number :
JDCD03-001-007
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
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0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Employee Number :
>100
Certification Level :
Verified Supplier
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