MachineU > China Products > Minerals & Metallurgy > Carbon Steel > Flat Steel Products > Silicon Steel
150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form
150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form
Specifications
Brand Name :
GaNova
Model Number :
JDCD03-001-004
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Diameter :
150.0mm +0mm/-0.2mm
Product Name :
SiC Epitaxial Wafer
Surface Orientation :
Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length :
47.5mm ± 1.5mm
Crystal Form :
4H
Polytype :
None Permitted
Description

150.0 mm +0mm/-0.2mm Sic Epitaxial Wafer Off-Axis:4°Toward <11-20>±0.5 °

JDCD03-001-004

Overview

A SiC wafer is a semiconductor made of silicon. Its flatness, thermal conductivity, and electrical conductivity make it an ideal carrier for silicon. While the 150mm diameter is still the standard, there are several companies that produce 200mm-diameter SiC. A SIC wafer can be produced in a number of different ways, but the most common size is the one used for power conversion.


The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and high-frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices.

Property P-MOS Grade P-SBD Grade D Grade
Crystal Form 4H
Polytype None Permitted Area≤5%
(MPD) a ≤0.2 /cm2 ≤0.5 /cm2 ≤5 /cm2
Hex Plates None Permitted Area≤5%
Hexagonal Polycrystal None Permitted
Inclusions a Area≤0.05% Area≤0.05% N/A
Resistivity 0.015Ω•cm—0.025Ω•cm 0.015Ω•cm—0.025Ω•cm 0.014Ω•cm—0.028Ω•cm
(EPD)a ≤4000/cm2 ≤8000/cm2 N/A
(TED)a ≤3000/cm2 ≤6000/cm2 N/A
(BPD)a ≤1000/cm2 ≤2000/cm2 N/A
(TSD)a ≤600/cm2 ≤1000/cm2 N/A
Stacking Fault ≤0.5% Area ≤1% Area N/A

Surface Metal Contamination

(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2
Diameter 150.0 mm +0mm/-0.2mm
Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5 mm ± 1.5 mm
Secondary Flat Length No Secondary Flat
Primary Flat Orientation Parallel to<11-20>±1°
Secondary Flat Orientation N/A
Orthogonal Misorientation ±5.0°
Surface Finish C-Face:Optical Polish,Si-Face:CMP
Wafer Edge Beveling

Surface Roughness

(10μm×10μm)

 Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm
Thickness a 350.0μm± 25.0 μm
LTV(10mm×10mm)a ≤2μm ≤3μm
(TTV)a ≤6μm ≤10μm
(BOW) a ≤15μm ≤25μm ≤40μm
(Warp) a ≤25μm ≤40μm ≤60μm
Chips/Indents None Permitted ≥0.5mm Width and Depth Qty.2 ≤1.0 mm Width and Depth

Scratches a

(Si Face,CS8520)

 ≤5 and Cumulative Length≤0.5×Wafer Diameter

≤5 and Cumulative Length≤1.5×Wafer

Diameter
TUA(2mm*2mm) ≥98% ≥95% N/A
Cracks None Permitted
Contamination None Permitted
Property P-MOS Grade P-SBD Grade D Grade
Edge Exclusion 3mm

Remark: 3mm edge exclusion is used for the items marked with a.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

ceramics silicon carbide density

,

gallium arsenide wafer

,

silicon carbide crucible sizes
Send your message to this supplier
Send Now

150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form

Ask Latest Price
Product Detail
Brand Name :
GaNova
Model Number :
JDCD03-001-004
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Contact Supplier
150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
4 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
Discover similar products
View More
Watch related videos

Find Similar Products By Category:

Supplier Homepage Products SiC Epitaxial Wafer
MachineU China Products Minerals & Metallurgy Carbon Steel Flat Steel Products Silicon Steel
Contact Supplier
Submit Requirement