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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
Specifications
Brand Name :
GaNova
Model Number :
JDCD01-001-021
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Dimensions :
50.8 ± 1 mm
Thickness :
350 ±25µm
BoW :
- 10µm ≤ BOW ≤ 10µm
Macro Defect Density :
0cm⁻²
Useable Area :
> 90% (edge exclusion)
Product Name :
Free-standing GaN Substrates
National standards of China :
GB/T32282-2015
Description

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices

The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain the high breakdown voltage. The details of the correlation between the surface morphology, Fe concentration, and thickness of Fe-doped GaN epitaxial layers used for high breakdown voltage devices will be also discussed in this paper.

2-inch Free-standing SI-GaN Substrates
Excellent level (S) Production level (A) Research level (B) Dummy level (C)

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Note:

(1) Useable area: edge and macro defects exclusion

(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o
S-1 S-2 A-1 A-2
Dimension 50.8 ± 1 mm
Thickness 350 ± 25 μm
Orientation flat (1-100) ± 0.5o, 16 ± 1 mm
Secondary orientation flat (11-20) ± 3o, 8 ± 1 mm
Resistivity (300K) > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50)
TTV ≤ 15 μm
BOW ≤ 20 μm ≤ 40 μm
Ga face surface roughness

< 0.2 nm (polished)

or < 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)
Package Packaged in a cleanroom in single wafer container
Useable area > 90% >80% >70%
Dislocation density <9.9x105 cm-2 <3x106 cm-2 <9.9x105 cm-2 <3x106 cm-2 <3x106 cm-2
Orientation:C plane (0001) off angle toward M-axis

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)
Macro defect density (hole) 0 cm-2 < 0.3 cm-2 < 1 cm-2
Max size of macro defects < 700 μm < 2000 μm < 4000 μm

* National standards of China (GB/T32282-2015)

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

rf semiconductor

,

gaas substrate

,

gan semiconductor
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD01-001-021
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Contact Supplier
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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