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C Face GaN Substrate
C Face GaN Substrate
C Face GaN Substrate
C Face GaN Substrate
C Face GaN Substrate
C Face GaN Substrate
C Face GaN Substrate
C Face GaN Substrate
Specifications
Brand Name :
GaNova
Model Number :
JDCD01-001-020
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name :
2-inch Free-standing N-GaN Substrates
Dimensions :
50.0 ±0.3mm
Thickness :
400 ± 30μm
Orientation flat :
(1- 100) ±0.1˚, 12.5 ± 1mm
TTV :
≤ 10µm
BoW :
≤ 20μm
Description

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer


Overview
GaN has excellent material characteristics for use in power devices, including a high breakdown voltage, high saturation velocity, and high thermal stability. Recent advances in bulk GaN growth technology have facilitated the development of vertical power devices such as Schottky barrier diodes, p–n junction diodes, and trench metal–oxide–semiconductor field-effect transistors.

2-inch Free-standing N-GaN Substrates

Production level(P)

Research(R)

Dummy(D)

C Face GaN Substrate

Note:

(1) 5 points: the miscut angles of 5 positions are 0.55 ±0.15o

(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.55 ±0.15o

(3) Useable area: exclusion of periphery and macro defects (holes)
P+ P P-
Item GaN-FS-C-N-C50-SSP
Dimensions 50.0 ±0.3 mm
Thickness 400 ± 30 μm
Orientation flat (1- 100) ±0.1o, 12.5 ± 1 mm
TTV ≤ 15 μm
BOW ≤ 20 μm
Resistivity (300K) ≤ 0.02 Ω·cm for N-type (Si-doped)
Ga face surface roughness ≤ 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness 0.5 ~1.5 μm (single side polished)
C plane (0001) off angle toward M-axis(miscut angles)

0.55 ± 0.1o

(5 points)

0.55± 0.15o

(5 points)

0.55 ± 0.15o

(3 points)
Threading dislocation density ≤ 7.5 x 105 cm-2 ≤ 3 x 106 cm-2
Number and max size of holes in Ф47 mm in the center 0 ≤ 3@1000 μm ≤ 12@1500 μm ≤ 20@3000 μm
Useable area > 90% >80% >70%
Package Packaged in a cleanroom in single wafer container

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

4 layer pcb immersion tin

,

gan wafer

,

dpf substrate
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C Face GaN Substrate

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD01-001-020
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Contact Supplier
C Face GaN Substrate
C Face GaN Substrate
C Face GaN Substrate
C Face GaN Substrate

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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