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4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
Specifications
Brand Name :
GaNova
Model Number :
JDCD03-002-002
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name :
Sic Epitaxial Wafer
Diameter :
100.0mm+0.0/-0.5mm
Surface orientation :
{0001}±0.2°
Length of main reference edge :
32.5 mm ± 2.0 mm
The edge of the wafer :
angle of chamfer
thickness :
500.0±25.0μm
Description

JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices

Overview

SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability.

4inch 4H-SiC Semi-insulating substrate
Product performance P level D level
Crystal form 4H
Polytypic Not allow Area≤5%
Micropipe Densitya ≤0.3/cm2 ≤5/cm2
Six square empty Not allow Area≤5%
Hexagon surface hybrid crystal Not allow Area≤5%
wrappage a Area≤0.05% N/A
Resistivity ≥1E9Ω·cm ≥1E5Ω·cm

(0004) XRDHalf height width of rocking curve (FWHM)

≤45Arcsecond

N/A
Diameter 100.0mm+0.0/-0.5mm
Surface orientation {0001}±0.2°
Length of main reference edge

32.5 mm ± 2.0 mm
Length of secondary reference edge 18.0 mm ± 2.0 mm
Main reference plane orientation parallel<11-20> ± 5.0˚
Secondary reference plane orientation 90 ° clockwise to the main reference plane ˚ ± 5.0 ˚, Si face up
surface preparation C-Face: Mirror Polishing, Si-Face: Chemical Mechanical Polishing (CMP)
The edge of the wafer angle of chamfer

Surface roughness(5μm×5μm)

Si face Ra＜0.2 nm
thickness

500.0±25.0μm
LTV(10mm×10mm)a

≤2µm

≤3µm
TTVa

≤6µm

≤10µm
Bowa

≤15µm

≤30µm
Warpa

≤25µm

≤45µm
Broken edge / gap Collapse edges of a length and a width of 0.5mm are not allowed ≤2 and each length and width of 1.0mm
scratcha ≤4,And the total length is 0.5 times the diameter ≤5 ,And the total length is 1.5 times the diameter
flaw not allow
pollution not allow
Edge removal

3mm

Remark: 3mm edge exclusion is used for the items marked with a.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

mosi2 heating elements

,

inconel 625 thermal conductivity

,

u type mosi2 heating element
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4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD03-002-002
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Delivery Time :
3-4 week days
Contact Supplier
4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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