Specifications
Brand Name :
GaNova
Model Number :
JDCD01-001-019
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name :
2-inch Free-standing U-GaN/SI-GaN Substrates
Dimensions :
50.8 ± 1mm
Thickness :
350 ± 25μm
Orientation flat :
(1-100) ± 0.5˚, 16 ±1mm
Secondary orientation flat :
(11-20) ± 3˚, 8 ± 1mm
Ga face surface roughness :
< 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy)
Description

2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm

2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer


Overview
GaN Breakdown Field

A higher breakdown field means that gallium nitride is superior over silicon in high voltage circuits such as high-power products. Manufacturers and engineers can also use GaN in similar voltage applications while maintaining a significantly smaller footprint.

2-inch Free-standing U-GaN/SI-GaN Substrates

Excellent level (S)

Production level(A)

Research

level (B)

Dummy

level (C)

Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

Note:

(1) Useable area: edge and macro defects exclusion

(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o

S-1 S-2 A-1 A-2
Dimensions 50.8 ± 1 mm
Thickness 350 ± 25 μm
Orientation flat (1-100) ± 0.5o, 16 ± 1 mm
Secondary orientation flat (11-20) ± 3o, 8 ± 1 mm
Resistivity (300K)

< 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50)

or > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50)

TTV ≤ 15 μm
BOW ≤ 20 μm ≤ 40 μm
Ga face surface roughness

< 0.2 nm (polished)

or < 0.3 nm (polished and surface treatment for epitaxy)

N face surface roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

Package Packaged in a cleanroom in single wafer container
Useable area > 90% >80% >70%
Dislocation density <9.9x105 cm-2 <3x106 cm-2 <9.9x105 cm-2 <3x106 cm-2 <3x106 cm-2
Orientation:C plane (0001) off angle toward M-axis

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)

0.35 ± 0.15o

(3 points)

Macro defect density (hole) 0 cm-2 < 0.3 cm-2 < 1 cm-2
Max size of macro defects < 700 μm < 2000 μm < 4000 μm

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

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Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

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Brand Name :
GaNova
Model Number :
JDCD01-001-019
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Contact Supplier
Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Employee Number :
>100
Certification Level :
Verified Supplier
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