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JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing
JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing
Specifications
Brand Name :
GaNova
Model Number :
JDCD07-001-002
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
MOQ :
1
Payment Terms :
T/T
Supply Ability :
50000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Orientation :
<100>,<111>
Type/Dopant :
P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
The Uniformity :
<5%
Resistivity :
0.001-20000 Ohm-cm
Surface Finished :
P/E,P/P
Uniformity :
<2.5%
Particle :
<10@.0.3um
Description

5-inch SOI epitaxial wafer for MEMS processing


Overview

Silicon Wafers (Si Wafer) are thin slices of highly pure crystallized Silicon. Silicon wafers act as a substrate for microelectronic devices and are especially useful in building electronic circuits because of their conductivity and affordability. Silicon comes seventh as the most common element in the entire universe and the second most common element on earth. Some common materials that contain silicon are beach sand, quartz, flint, agate, among others. Silicon is the major component in construction materials like brick, cement, and glass. It also tops the chart as the most common semiconductor which has made it to be the most widely used in the electronic and technology sector

Specification

SOI
Diameter 4’’ 5’’ 6’’ 7’’

Device Layer

 Dopant Boron,Phos,Arsenic,Antimony,Undoped
Orientation <100>,<111>
Type SIMOX, BESOI, Simbond, Smart-cut
Resistivity 0.001-20000 Ohm-cm
Thickness(um) 0.2-150
The Uniformity <5%
BOX Layer Thickness(um) 0.4-3
Uniformity <2.5%

Substrate

 Orientation <100>, <111>
Type/Dopant P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
Thickness(um) 300-725
Resistivity 0.001-20000 Ohm-cm
Surface Finished P/P, P/E
Particle <10@.0.3um

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Product tags

silicon wafer specifications

,

n type silicon wafer

,

indium phosphide wafer
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JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing

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Product Detail
Brand Name :
GaNova
Model Number :
JDCD07-001-002
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
MOQ :
1
Payment Terms :
T/T
Contact Supplier
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JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
3 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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