0.5A Laser Diode Chip Laser Printing Wavelength 915nm Surface Mount Standard Package
915nm 10W COS Diode Laser Chip On Submount Design
The material can be integrated by wafer bonding techniques and have superior characteristics to germanium, with a large absorption at 1.3 and 1.5 μm wavelengths and a relative low dark current, attributed to good crystal quality. This enables low-power operation and small device size. In this paper, on-chip light sources and photodetectors are integrated with Si waveguides, and an on-chip optical transmission link is demonstrated by combining these components.
Optical | |
Center Wavelength | 915nm |
Output Power | 10W |
Spectral Width FWHM | ≤6nm |
Slope Efficiency | 1.0W/A |
Fast Axis Divergence | 60Deg |
Slow Axis Divergence | 11Deg |
Polarization Mode | TE |
Emitter Size | 94um |
Electrical | |
Threshold Current | 0.5A |
Operating Current | 12A |
Operating Voltage | 1.65V |
Power Conversion Efficiency | 58% |
Thermal | |
Operating Temperature | 15-55℃ |
Storage Temperature | -30-70℃ |
Wavelength Temp. Coefficient | 0.3nm/℃ |
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