Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58%
915nm 10W COS Diode Laser Chip On Submount Design
On-chip integration of laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%.
The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.
Optical | |
Center Wavelength | 915nm |
Output Power | 10W |
Spectral Width FWHM | ≤6nm |
Slope Efficiency | 1.0W/A |
Fast Axis Divergence | 60Deg |
Slow Axis Divergence | 11Deg |
Polarization Mode | TE |
Emitter Size | 94um |
Electrical | |
Threshold Current | 0.5A |
Operating Current | 12A |
Operating Voltage | 1.65V |
Power Conversion Efficiency | 58% |
Thermal | |
Operating Temperature | 15-55℃ |
Storage Temperature | -30-70℃ |
Wavelength Temp. Coefficient | 0.3nm/℃ |
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