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625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
Specifications
Brand Name :
GaNova
Model Number :
JDWY03-001-031
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
MOQ :
5
Payment Terms :
T/T
Supply Ability :
10000pcs/month
Delivery Time :
3-4 week days
Packaging Details :
Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name :
4inch GaN-on-Sapphire Blue/Green LED Wafer
Type :
Flat Sapphire
Thickness :
650 ± 25μm
Orientation :
C plane (0001) off angle toward M-axis 0.2 ± 0.1°
Polish :
Single side polished (SSP) / Double side polished (DSP)
Dimension :
100 ± 0.2mm
Description

Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP

For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.

4inch GaN-on-Sapphire Blue/Green LED Wafer

Substrate

 Type Flat Sapphire

625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
Polish Single side polished (SSP) / Double side polished (DSP)
Dimension 100 ± 0.2 mm
Orientation C plane (0001) off angle toward M-axis 0.2 ± 0.1°
Thickness 650 ± 25 μm

Epilayer

 Structure 0.2μm pGaN/0.5μm MQWs/2.5μm nGaN/2.0μm uGaN
Thickness 5.5 ± 0.5μm
Roughness (Ra) <0.5 nm
Dislocation density < 5 × 108 cm-2
Wavelength Blue LED Green LED
465 ± 10 nm 525 ± 10 nm
Wavelength FWHMs < 25 nm < 40 nm
Chip Performance Cut-in voltage@1μA 2.3-2.5V 2.2-2.4V
Useable Area > 90% (edge and macro defects exclusion)

Package

Packaged in a cleanroom in a single wafer container

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

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625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

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Product Detail
Brand Name :
GaNova
Model Number :
JDWY03-001-031
Certification :
UKAS/ISO9001:2015
Place of Origin :
Suzhou China
MOQ :
5
Payment Terms :
T/T
Contact Supplier
video
625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

Shanghai GaNova Electronic Information Co., Ltd.

Verified Supplier
4 Years
shanghai, shanghai
Since 2020
Business Type :
Manufacturer
Main Products :
GaN Epitaxial Wafer, SiC Epitaxial Wafer, GaAs Epi Wafer
Employee Number :
>100
Certification Level :
Verified Supplier
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