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Supplier Homepage > Products > SiC Epitaxial Wafer

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GaN Epitaxial Wafer

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SiC Epitaxial Wafer

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CVD Diamond Substrates

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Rapid Thermal Annealing System

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Hall Effect Sensor Tester

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Aluminum Nitride Wafer

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Silicon Carbide Crystal

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Ga2O3 Wafer

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Silicon Wafer

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Sapphire Wafer

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Patterned Sapphire Substrates

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Wafer Holder

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SiC Epitaxial Wafer

42
Choose from our sic epitaxial wafer products, find out more, and feel free to inquiry us
Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um
Hot selling!
SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um
Model：JDCD03-002-007
Certification：UKAS/ISO9001:2015
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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
Hot selling!
SiC Epitaxial Wafer

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
Model：JDCD03-002-007
Certification：UKAS/ISO9001:2015
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4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
Hot selling!
SiC Epitaxial Wafer

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
Model：JDCD03-002-007
Certification：UKAS/ISO9001:2015
Contact Now
P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm
SiC Epitaxial Wafer

P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm
Model：JDCD03-002-005
Certification：UKAS/ISO9001:2015
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4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm
SiC Epitaxial Wafer

4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm
Model：JDCD03-002-008
Certification：UKAS/ISO9001:2015
Contact Now
150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
SiC Epitaxial Wafer

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm
Model：JDCD03-002-006
Certification：UKAS/ISO9001:2015
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150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm
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SiC Epitaxial Wafer

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm
Model：JDCD03-001-003
Certification：UKAS/ISO9001:2015
Contact Now
N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
SiC Epitaxial Wafer

N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
Model：JDCD03-002-009
Certification：UKAS/ISO9001:2015
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47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1°
video
SiC Epitaxial Wafer

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
Model：JDCD03-001-003
Certification：UKAS/ISO9001:2015
Contact Now
6inch 4H SiC Substrate N Type P SBD Grade 350μm
SiC Epitaxial Wafer

6inch 4H SiC Substrate N Type P SBD Grade 350μm
Model：JDCD03-002-008
Certification：UKAS/ISO9001:2015
Contact Now
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
video
SiC Epitaxial Wafer

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
Model：JDCD03-001-003
Certification：UKAS/ISO9001:2015
Contact Now
P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices
video
SiC Epitaxial Wafer

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices
Model：JDCD03-001-001
Certification：UKAS/ISO9001:2015
Contact Now
150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm
SiC Epitaxial Wafer

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm
Model：JDCD03-002-007
Certification：UKAS/ISO9001:2015
Contact Now
2 Inch SiC Substrate 350μm For Demanding Power Electronics
video
SiC Epitaxial Wafer

2 Inch SiC Substrate 350μm For Demanding Power Electronics
Delivery Time：3-4 week days
Certification：UKAS/ISO9001:2015
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0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP
video
SiC Epitaxial Wafer

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP
Model：JDCD03-001-007
Certification：UKAS/ISO9001:2015
Contact Now
No Secondary Flat SiC Substrate 150.0mm 47.5mm
SiC Epitaxial Wafer

No Secondary Flat SiC Substrate 150.0mm 47.5mm
Delivery Time：3-4 week days
Certification：UKAS/ISO9001:2015
Contact Now
Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade
video
SiC Epitaxial Wafer

Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade
Model：JDCD03-001-004
Certification：UKAS/ISO9001:2015
Contact Now
260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices
video
SiC Epitaxial Wafer

260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices
Model：JDCD03-001-001
Certification：UKAS/ISO9001:2015
Contact Now
150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form
SiC Epitaxial Wafer

150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form
Model：JDCD03-001-004
Certification：UKAS/ISO9001:2015
Contact Now
P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm
SiC Epitaxial Wafer

P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm
Model：JDCD03-002-008
Certification：UKAS/ISO9001:2015
Contact Now
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