2 Inch SiC Substrate 350μm For Demanding Power Electronics Video from China

SiC Epitaxial Wafer

Apr 16, 2025

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Product Description: P-Level 2-Inch SiC Substrate 4H-N/SI<0001>260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices ...learn more

2 Inch SiC Substrate 350μm For Demanding Power Electronics

2 Inch SiC Substrate 350μm For Demanding Power Electronics

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Shanghai GaNova Electronic Information Co., Ltd.

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3 Years

GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer

GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer

GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer

625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

150mm Rapid Thermal Annealing System With Three Sets Process Gases

150mm Rapid Thermal Annealing System With Three Sets Process Gases

150mm Rapid Thermal Annealing System With Three Sets Process Gases

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

2 inch Free-standing SI-GaN Substrates

2 inch Free-standing SI-GaN Substrates

2 inch Free-standing SI-GaN Substrates

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4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for

4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for

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0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm

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P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

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6inch 4H SiC Substrate N Type P SBD Grade 350μm

6inch 4H SiC Substrate N Type P SBD Grade 350μm

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