GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production Video from China

GaN Epitaxial Wafer

Apr 05, 2025

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Product Description: Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are ...learn more

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

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Ganova

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Shanghai GaNova Electronic Information Co., Ltd.

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3 Years

625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

2 inch Free-standing SI-GaN Substrates

2 inch Free-standing SI-GaN Substrates

2 inch Free-standing SI-GaN Substrates

150mm Rapid Thermal Annealing System With Three Sets Process Gases

150mm Rapid Thermal Annealing System With Three Sets Process Gases

150mm Rapid Thermal Annealing System With Three Sets Process Gases

GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer

GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer

GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer

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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

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4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser

4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser

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A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

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4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

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12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped

12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped

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