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0.35W N Channel 0.22A BSS138 Field Transistor Mosfets
0.35W N Channel 0.22A BSS138 Field Transistor Mosfets
Specifications
Brand Name :
Huixin
Model Number :
BSS138
Certification :
ISO9001, ISO4001, IATF16949, UL
Place of Origin :
China
MOQ :
3000pcs
Price :
Negotiable
Payment Terms :
T/T, MoneyGram
Supply Ability :
1 billion pieces/ Month
Delivery Time :
4-5Weeks
Packaging Details :
3000pcs / Reel
Type :
N-Channel 50-V(D-S) MOSFET
Material :
Silicon
Package :
SOT-23
Drain-Source Voltage :
50V
Continuous Drain Current :
0.22A
Power Dissipation :
0.35W
Applications :
Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
Features :
Rugged and Reliable
Description
SOT-23 Plastic-Encapsulate MOSFETS
BSS138 N-Channel 50-V(D-S) MOSFET
V(BR)DSS RDS(on)MAX ID
50 V 3.5Ω@10V 220mA
6Ω@4.5V

BSS138 SOT-23 Datasheet.pdf

FEATURES
1.High density cell design for extremely low RDS(on)
2.Rugged and Relaible
APPLICATIONS
1.Direct Logic-Level Interface: TTL/CMOS
2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
3.Battery Operated Systems
4.Solid-State Relays
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 50 V
Continuous Gate-Source Voltage VGSS ±20
Continuous Drain Current ID 0.22 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W
Operating Temperature Tj 150 ℃
Storage Temperature Tstg -55 ~+150
ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified )
Parameter Symbol Test Condition Min Typ Max Units
Off characteristics
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 50 V
Gate-body leakage IGSS VDS =0V, VGS =±20V ±100 nA
Zero gate voltage drain current IDSS VDS =50V, VGS =0V 0.5 µA
VDS =30V, VGS =0V 100 nA
On characteristics
Gate-threshold voltage (note 1) VGS(th) VDS =VGS, ID =1mA 0.80 1.50 V
Static drain-source on-resistance (note 1) RDS(on) VGS =10V, ID =0.22A 3.50 Ω
VGS =4.5V, ID =0.22A 6
Forward transconductance (note 1) gFS VDS =10V, ID =0.22A 0.12 S
Dynamic characteristics (note 2)
Input capacitance Ciss VDS =25V,VGS =0V, f=1MHz 27 pF
Output capacitance Coss 13
Reverse transfer capacitance Crss 6
Switching characteristics
Turn-on delay time (note 1,2) td(on) VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω 5 ns
Rise time (note 1,2) tr 18
Turn-off delay time (note 1,2) td(off) 36
Fall time (note 1,2) tf 14
Drain-source body diode characteristics
Body diode forward voltage (note 1) VSD IS=0.44A, VGS = 0V 1.4 V
Notes:
1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2. These parameters have no way to verify.
Product tags

igbt semiconductor

,

datasheet 7 segment common anode

,

igbt circuit
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0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

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Product Detail
Brand Name :
Huixin
Model Number :
BSS138
Certification :
ISO9001, ISO4001, IATF16949, UL
Place of Origin :
China
MOQ :
3000pcs
Price :
Negotiable
Contact Supplier
0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

Guangdong Huixin Electronics Technology Co., Ltd.

Active Member
6 Years
guangdong, dongguan
Since 2010
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Fast Recovery Rectifier Diode, General Purpose Rectifier Diode, Schottky Barrier Rectifier Diode
Total Annual :
500million-600million
Employee Number :
480~520
Certification Level :
Active Member
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