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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
Specifications
Brand Name :
Huixin
Model Number :
BC3400
Certification :
ISO9001, ISO4001, IATF16949, UL
Place of Origin :
China
MOQ :
3000pcs
Price :
Negotiable
Payment Terms :
T/T, Paypal, Cash
Supply Ability :
1 billion pieces/ Month
Delivery Time :
2-4Weeks
Packaging Details :
3000pcs / Reel
Type :
BC3400 N Channel MOSFET
Drain-Source Voltage :
30V
Continuous Drain Current :
5.8A
MPQ :
3000PCS
Sample Time :
5-7 Days
Sample :
Free
Lead Time :
2-4Weeks
Lead Free Status :
RoHS
Description
SOT-23 Plastic-Encapsulate MOSFETS

BC3400 N-Channel Enhancement Mode Field Effect Transistor
FEATURES
High dense cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID 5.8 A
Drain Current-Pulsed (note 1) IDM 30 A
Power Dissipation PD 350 mW
Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55~+150 ℃
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Units
Off Characteristics
Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 30 V
Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 µA
Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA
On characteristics
Drain-source on-resistance (note 3) RDS(on) VGS =10V, ID =5.8A 35 mΩ
VGS =4.5V, ID =5A 40 mΩ
Forward tranconductance gFS VDS =5V, ID =5A 8 S
Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.7 1.4 V
Dynamic Characteristics (note 4,5)
Input capacitance Ciss VDS =15V,VGS =0V,f =1MHz 1050 pF
Output capacitance Coss 99 pF
Reverse transfer capacitance Crss 77 pF
Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 3.6 Ω
Switching Characteristics (note 4,5)
Turn-on delay time td(on) VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 5 ns
Turn-on rise time tr 7 ns
Turn-off delay time td(off) 40 ns
Turn-off fall time tf 6 ns
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3) VSD IS=1A,VGS=0V 1 V

Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Product tags

p ch mosfet

,

mosfet module tp6c07001

,

ag726 mosfet
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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

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Product Detail
Brand Name :
Huixin
Model Number :
BC3400
Certification :
ISO9001, ISO4001, IATF16949, UL
Place of Origin :
China
MOQ :
3000pcs
Price :
Negotiable
Contact Supplier
Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

Guangdong Huixin Electronics Technology Co., Ltd.

Active Member
6 Years
guangdong, dongguan
Since 2010
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Fast Recovery Rectifier Diode, General Purpose Rectifier Diode, Schottky Barrier Rectifier Diode
Total Annual :
500million-600million
Employee Number :
480~520
Certification Level :
Active Member
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