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BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET
BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET
Specifications
Brand Name :
Huixin
Model Number :
BSS138K
Certification :
ISO9001, ISO4001, IATF16949, UL
Place of Origin :
China
MOQ :
3000pcs
Price :
Negotiable
Payment Terms :
T/T, MoneyGram
Supply Ability :
1 billion pieces/ Month
Delivery Time :
4-5Weeks
Packaging Details :
3000pcs / Reel
Type :
BSS138K N-Channel
Material :
Silicon
Package :
SOT-23
Drain-Source Voltage :
50V
Continuous Drain Current :
0.22A
Power Dissipation :
0.35W
MPQ :
3000PCS
Features :
Rugged and Reliable
Description
BSS138K N-Channel Enhancement Mode Power MOSFET

FEATURES

1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating:HBM 2300V
2. High power and current handing capability
3. Lead free product is acquired
4. Surface mount package
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 0.22 A
Drain Current-Pulsed (Note 1) IDM 0.88 A
Maximum Power Dissipation PD 0.35 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 50 65 - V
Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - ±110 ±500 nA
VGS=±12V,VDS=0V - ±0.3 ±10 uA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.6 1.1 1.6 V
Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=0.2A - 1.3 3 Ω
VGS=10V, ID=0.22A - 1 2 Ω
Forward Transconductance gFS VDS=10V,ID=0.2A 0.2 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss VDS=25V,VGS=0V, F=1.0MHz - 30 - PF
Output Capacitance Coss - 15 - PF
Reverse Transfer Capacitance Crss - 6 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω - - 5 nS
Turn-on Rise Time tr - - 5 nS
Turn-Off Delay Time td(off) - - 60 nS
Turn-Off Fall Time tf - - 35 nS
Total Gate Charge Qg VDS=25V,ID=0.2A,
VGS=10V		 - - 2.4 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.22A - - 1.3 V
Diode Forward Current (Note 2) IS - - 0.22 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Product tags

n channel power mosfet

,

n-channel mosfet

,

n channel mosfet
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BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

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Product Detail
Brand Name :
Huixin
Model Number :
BSS138K
Certification :
ISO9001, ISO4001, IATF16949, UL
Place of Origin :
China
MOQ :
3000pcs
Price :
Negotiable
Contact Supplier
BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

Guangdong Huixin Electronics Technology Co., Ltd.

Active Member
6 Years
guangdong, dongguan
Since 2010
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Fast Recovery Rectifier Diode, General Purpose Rectifier Diode, Schottky Barrier Rectifier Diode
Total Annual :
500million-600million
Employee Number :
480~520
Certification Level :
Active Member
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