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International Silicon 1N4005 Rectifier Diode 1Amp with DO-41 Package
International Silicon 1N4005 Rectifier Diode 1Amp with DO-41 Package
Specifications
Brand Name :
Huixin
Model Number :
1N4005 DO-41
Certification :
ISO14001 ISO9001 ISO/TS16949 UL
Place of Origin :
China
MOQ :
5000 PCS
Price :
Negotiable
Payment Terms :
T/T, Paypal, Cash
Supply Ability :
1 billion pieces/ Month
Delivery Time :
2-4Weeks
Packaging Details :
5000pcs/reel/box
Type :
International Rectifier Diode
Package :
DO-41
MPQ :
5000PCS
Samples :
Free
Sample Time :
5-7 Days
Lead Free Status :
RoHS
Current :
1Amp
Voltage :
500V
IFSM :
30A
Material :
Silicon
Description

DO-41 1N4005 Rectifier Diode International Silicon Rectifier Diode

International Silicon 1N4005 Rectifier Diode 1Amp with DO-41 Package

1N4001-1N4007 DO-41 Datasheet.pdf

Features:

​

  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Open Junction chip
  • Low reverse leakage
  • High forward surge current capability
  • High temperature soldering guaranteed

Mechanical Data:

  • Case : JEDEC DO-41 Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Polarity symbol marking on body
  • Mounting Position : Any
  • Weight : 0.0088 ounce, 0.25 grams

Maximum Ratings And Electrical Characteristics:

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

SYMBOLS

 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNITS
Maximum Repetitive Peak Reverse Voltage

VRRM

 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage

VRMS

 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage

VDC

 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Rectifier Current at TL=100°C

IF(AV)

 1 Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated load IFSM 30 Amps
Maximum Instantaneous Forward Voltage at 1A

VF

 1.1 Volts
Maximum DC Reverse Current at rated DC blocking voltage TA=25°C IR 10 μA
TA=125°C 500


Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

Product tags

lazer diode 980nm package

,

in4007 rectifier diode

,

rectifier diodes 1n4001 1n4007
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International Silicon 1N4005 Rectifier Diode 1Amp with DO-41 Package

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Product Detail
Brand Name :
Huixin
Model Number :
1N4005 DO-41
Certification :
ISO14001 ISO9001 ISO/TS16949 UL
Place of Origin :
China
MOQ :
5000 PCS
Price :
Negotiable
Contact Supplier
International Silicon 1N4005 Rectifier Diode 1Amp with DO-41 Package

Guangdong Huixin Electronics Technology Co., Ltd.

Active Member
6 Years
guangdong, dongguan
Since 2010
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Fast Recovery Rectifier Diode, General Purpose Rectifier Diode, Schottky Barrier Rectifier Diode
Total Annual :
500million-600million
Employee Number :
480~520
Certification Level :
Active Member
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