74HC132D Electronics IC Chip IC China supplier Integared Circuit
FEATURES
• Output capability: standard
• ICC category: SSI
GENERAL DESCRIPTION
The 74HC/HCT132 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT132 contain four 2-input NAND gates which accept standard input signals.
They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. The gate switches at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT− is defined as the hysteresis voltage VH.
A part of stock list
C.I MM74HC164MX | FSC | P0552AD/P9FAD | SOP-14 |
DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
RES 2010 330R 5% CRCW2010330RJNEF | VISHAY | 1612 | SMD2010 |
RES 2010 68K 5% CRCW201068K0JNEF | VISHAY | 1612 | SMD2010 |
C.I MCP6S26-I/SL | MICROCHIP | 16255C4 | SOP-14 |
ACOPLADOR. PC817A | SHARP | 2016.08.10/H33 | DIP-4 |
TRANS 2SS52M | Honeywell | 2SSM/523-LF | TO-92 |
C.I SCC2691AC1D24 | 1149+ | SOP-24 | |
C.I TP3057WM | TI | XM33AF | SOP-16 |
C.I CD14538BE | TI | 33ADS8K | DIP-16 |
C.I CL2N8-G | MICROCHIP | CL2C | SOT-89 |
C.I SN75179BP | TI | 57C50DM | DIP-8 |
C.I L6219DS | ST | 135 | SOP-24 |
CAP 1210 470PF 1KV NP0 CL32C471JIINNNE | SAMSUNG | AC7JO2H | SMD1210 |
INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF | TDK | YA16H0945122/3R3 | SMD6045 |
CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR | PAN | Y1628F843536/2.2/50V/SYK | SMD4*5.4 |
C.I 24LC256-I/SN | MICROCHIP | 1636M6G | SOP-8 |
CAP ELCO SMD 150UF 25V UCD1E151MNL1GS | NICHICON | 160602/150/25V/H72 | SMD8*10.5 |
RES RC0805JR-0727RL | YAGEO | 1538 | SMD0805 |
C.I SN75240PW | TI | 11/A75240 | MSOP-8 |
RES RC0805JR-0715KL | YAGEO | 1637 | SMD0805 |
CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T | TAIYOYUDEN | 1608 | SMD0805 |
CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE | SAMSUNG | AC7JO2H | SMD0805 |
RES 0805 28K7 RC0805FR-0728K7L 1% | YAGEO | 1638 | SMD0805 |
RES 3K3 5% CASE 0805RC0805JR-073K3L | YAGEO | 1623 | SMD0805 |
TRIAC BTA26-600BRG | ST | 628 | TO-3P |
CAP 0805 330NF 100V C2012X7S2A334K125AB | TDK | IB16F15763SD | SMD0805 |
Absolute Maximum Ratings
Storage Temperature −65°C to +150°C
Ambient Temperature under Bias −55°C to +125°C
Junction Temperature under Bias −55°C to +150°C
VCC Pin Potential to Ground Pin −0.5V to +7.0V
Input Voltage (Note 2) −0.5V to +7.0V
Input Current (Note 2) −30 mA to +5.0 mA
Voltage Applied to Output in HIGH State (with VCC = 0V)
Standard Output −0.5V to VCC 3-STATE Output −0.5V to +5.5V
Current Applied to Output in LOW State (Max) twice the rated IOL (mA)
ESD Last Passing Voltage (Min) 4000V