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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
Specifications
Model Number :
IRF7311TRPBF
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
7600pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
Mosfet Array 20V 6.6A 2W Surface Mount 8-SO
Drain-Source Voltage :
20 V
Gate-Source Voltage :
±12 V
Pulsed Drain Current :
26 A
Continuous Source Current :
2.5 A
Single Pulse Avalanche Energy :
100 mJ
Avalanche Current :
4.1 A
Description

IRF7311

HEXFET® Power MOSFET

  • Generation V Technology
  • Ultra Low On-Resistance
  • Dual N-Channel MOSFET
  • Surface Mount
  • Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current… 1 TA = 25°C ID 6.6 A
TA = 70°C 5.3
Pulsed Drain Current IDM 26 A
Continuous Source Current (Diode Conduction) IS 2.5 A
Maximum Power Dissipation …1 TA = 25°C PD 2.0 W
TA = 70°C 1.3
Single Pulse Avalanche Energy ‚2 EAS 100 mJ
Avalanche Current IAR 4.1 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt ƒ3 dv/dt 5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C

Notes:

1. Surface mounted on 1 in square Cu board

2. Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A.

ƒ3. ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
IRF3707PBF 6217 IR 11+ TO-220
IRF5210PBF 2546 IR 15+ TO-220
IRF5800TRPBF 54000 IR 16+ TSOP-6
IRF6218PBF 8426 IR 06+ TO-220AB
IRF640NPBF 5610 IR 15+ TO-220
IRF640NSTRLPBF 4905 IR 16+ TO-263
IRF6638TRPBF 4492 IR 13+ SMD
IRF7303TRPBF 15463 IR 14+ SOP-8
IRF7328TRPBF 6288 IR 13+ SOP-8
IRF740B 49000 FSC 16+ TO-220
IRF740PBF 11487 IR 16+ TO-220
IRF7416TRPBF 23190 IR 16+ SOP-8
IRF7494TRPBF 9525 IR 14+ SOP-8
IRF7907TRPBF 12836 IR 13+ SOP-8
IRF8010PBF 17656 IR 16+ TO-220
IRF840PBF 14327 VISHAY 16+ TO-220
IRF8788TRPBF 21214 IR 12+ SOP-8
IRF9530NPBF 5539 IR 16+ TO-220
IRF9620PBF 3435 VISHAY 13+ TO-220
IRF9Z24N 9496 IR 16+ TO-220
IRFB3004PBF 8497 IR 09+ TO-220
IRFB31N20D 6973 IR 14+ TO-220
IRFB3207ZPBF 16234 IR 15+ TO-220
IRFB3306PBF 7959 IR 13+ TO-220
IRFB4227PBF 14319 IR 16+ TO-220
IRFB4310PBF 7645 IR 16+ TO-220
IRFB4332PBF 5199 IR 16+ TO-220
IRFB4332PBF 4735 IR 16+ TO-220
IRFB52N15DPBF 7716 IR 15+ TO-220
IRFI4019HG-117P 4847 IR 14+ TO-220-5

Product tags

igbt mosfet

,

mosfet igbt

,

n-channel mosfet
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET

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Product Detail
Model Number :
IRF7311TRPBF
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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