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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
Specifications
Model Number :
FGA25N120ANTD
Certification :
new & origianl
Place of Origin :
original factory
MOQ :
10 pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
4800pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P
Collector-Emitter Voltage :
1200 V
Gate-Emitter Voltage :
± 20 V
Pulsed Collector Current :
90 A
Diode Maximum Forward Current :
150 A
Operating Junction Temperature :
-55 to +150 °C
Storage Temperature Range :
-55 to +150 °C
Description

FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C

• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C

• Extremely enhanced avalanche capability

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

Absolute Maximum Ratings

Symbol Description FGA25N120ANTD Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current @ TC = 25°C 50 A
Collector Current @ TC = 100°C 25 A
ICM Pulsed Collector Current (Note 1) 90 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 150 A
PD Maximum Power Dissipation @ TC = 25°C 312 W
Maximum Power Dissipation @ TC = 100°C 125 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL

Maximum Lead Temp. for soldering Purposes,

1/8” from case for 5 seconds

 300 °C

Mechanical Dimensions

TO-3PN

Product tags

mosfet 200a

,

irf520 mosfet

,

irfz44n mosfet
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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

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Product Detail
Model Number :
FGA25N120ANTD
Certification :
new & origianl
Place of Origin :
original factory
MOQ :
10 pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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