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IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET
IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET
Specifications
Model Number :
IRFBC30
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8500pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
N-Channel 600 V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB
Drain-source Voltage (VGS = 0) :
600 V
Gate-source Voltage :
± 20 V
Drain Current (pulsed) :
14 A
Peak Diode Recovery voltage slope :
3 V/ns
Storage Temperature :
-65 to 150 ℃
Max. Operating Junction Temperature :
150 ℃
Description

IRFBC30

N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET

TYPE VDSS RDS(on) ID
IRFBC30 600 V < 2.2 Ω 3.6 A

TO-220

■ TYPICAL RDS(on) = 1.8 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESHTM ΙΙ is the evolution of the first generation of MESH OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain- gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 ℃ 3.6 A
ID Drain Current (continuous) at Tc = 100 ℃ 2.3 A
IDM (•) Drain Current (pulsed) 14 A
Ptot Total Dissipation at Tc = 25 ℃ 75 W
Derating Factor 0.6 W/℃
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
Tstg Storage Temperature -65 to 150 ℃
Tj Max. Operating Junction Temperature 150 ℃

(•) Pulse width limited by safe operating area

( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

INTERNAL SCHEMATIC DIAGRAM

TO-220 MECHANICAL DATA

Product tags

p55nfo power mosfet

,

mosfet power transistor com

,

irf520 mosfet
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IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

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Product Detail
Model Number :
IRFBC30
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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