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IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
Specifications
Model Number :
IRF9540
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8600pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
P-Channel 100 V 19A (Tc) 150W (Tc) Through Hole TO-220AB
Drain to Source Voltage :
-100 V
Drain to Gate Voltage (RGS = 20kΩ) :
-100 V
Continuous Drain Current :
-19 A
Pulsed Drain Current :
-76 A
Maximum Power Dissipation :
150 W
Operating and Storage Temperature :
-55 to 175 ℃
Description

IRF9540, RF1S9540SM

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly Developmental Type TA17521.

Features

• 19A, 100V

• rDS(ON) = 0.200Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified

PARAMETER SYMBOL IRF9540, RF1S9540SM UNITS
Drain to Source Voltage (Note 1) VDS -100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) VDGR -100 V

Continuous Drain Current

TC = 100℃

 ID

-19

-12

A

A
Pulsed Drain Current (Note 3) IDM -76 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation (Figure 1) PD 150 W
Linear Derating Factor (Figure 1) 1 W/℃
Single Pulse Avalanche Energy Rating (Note 4) EAS 960 mJ
Operating and Storage Temperature TJ, TSTG -55 to 175 ℃

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief 334

TL

Tpkg

300

260

℃

℃

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. TJ = 25℃ to 150℃.

Symbol

Packaging

JEDEC TO-220AB JEDEC TO-263AB

Test Circuits and Waveforms

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Product tags

irf520 mosfet

,

power mosfet ic

,

p55nfo power mosfet
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IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

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Product Detail
Model Number :
IRF9540
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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