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Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038
Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038
Specifications
Model Number :
2N6038
Certification :
new & original
Place of Origin :
original factory
MOQ :
20
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
10000
Delivery Time :
1 day
Packaging Details :
please contact me for details
Description :
Bipolar (BJT) Transistor NPN - DarliCM GROUPon 60 V 4 A 40 W Through Hole TO-126
Material :
Plastic Package
Collector−Base Voltage :
60
ESD Ratings :
Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V
Epoxy Meets :
UL 94 V−0 @ 0.125 in
Description

Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

Plastic DarliCM GROUPon complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

• High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc

(Min) — 2N6036, 2N6039

• Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc

• Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication

• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package

MAXIMUM RATINGS
Rating Symbol Value Unit

Collector−Emitter Voltage 2N6034

2N6035, 2N6038

2N6036, 2N6039

 VCEO

40

60

80

 Vdc

Collector−Base Voltage 2N6034

2N6035, 2N6038

2N6036, 2N6039

 VCBO

40

60

80

 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc

Collector Current Continuous

Peak

 IC

4.0

8.0

Adc

Apk
Base Current IB 100 mAdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

 PD

40

320

W

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

 PD

1.5

12

W

mW/°C
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 °C

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 3.12 °C/W
Thermal Resistance, Junction−to−Ambient RJA 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0) 2N6034 2N6035, 2N6038 2N6036, 2N6039

 VCEO(sus)

40

60

80

--

--

--

 Vdc

Collector−Cutoff Current

(VCE = 40 Vdc, IB = 0) 2N6034

(VCE = 60 Vdc, IB = 0) 2N6035, 2N6038

(VCE = 80 Vdc, IB = 0) 2N6036, 2N6039

 ICEO

--

--

--

100

100

100

 uA

Collector−Cutoff Current

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035, 2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036, 2N6039

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6035, 2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6036, 2N6039

ICEX

--

--

--

--

--

--

100

100

100

500

500

500

 uA

Collector−Cutoff Current

(VCB = 40 Vdc, IE = 0) 2N6034

(VCB = 60 Vdc, IE = 0) 2N6035, 2N6038

(VCB = 80 Vdc, IE = 0) 2N6036, 2N6039

 ICBO

--

--

--

0.5

0.5

0.5

 mAdc
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO -- 2.0 mAdc
ON CHARACTERISTICS

DC Current Gain

(IC = 0.5 Adc, VCE = 3.0 Vdc)

(IC = 2.0 Adc, VCE = 3.0 Vdc)

(IC = 4.0 Adc, VCE = 3.0 Vdc)

 hFE

500

750

100

--

15,000

--

 --

Collector−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

(IC = 4.0 Adc, IB = 40 mAdc)

 VCE(sat)

--

--

2.0

3.0

 Vdc

Base−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 40 mAdc)

 VBE(sat) -- 4.0 Vdc

Base−Emitter On Voltage

(IC = 2.0 Adc, VCE = 3.0 Vdc)

 VBE(on) -- 2.8 Vdc
DYNAMIC CHARACTERISTICS

Small−Signal Current−Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

 |hfe| 25 -- --

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036 2N6038, 2N6039

 Cob

--

--

200

100

 pF

*Indicates JEDEC Registered Data.

Product tags

enhancement type mosfet

,

p type mosfet

,

mosfet type p
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Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

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Product Detail
Model Number :
2N6038
Certification :
new & original
Place of Origin :
original factory
MOQ :
20
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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