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NDT452AP Power Mosfet Transistor P Channel Enhancement Mode Field Effect Transistor
NDT452AP Power Mosfet Transistor P Channel Enhancement Mode Field Effect Transistor
Specifications
Model Number :
NDT452AP
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
9500pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
P-Channel 30 V 5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Drain-Source Voltage :
-30 V
Gate-Source Voltage :
±20 V
Drain Current - Continuous :
-5 A
Operating and Storage Temperature :
-65 to 150 °C
Description

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

Features

• -5A, -30V. RDS(ON) = 0.065W @ VGS = -10V

RDS(ON) = 0.1W @ VGS = -4.5V.

• High density cell design for extremely low RDS(ON).

• High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter NDT452AP Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
ID

Drain Current - Continuous (Note 1a)

- Pulsed

-5 A
-15
PD

Maximum Power Dissipation (Note 1a)

(Note 1b)

(Note 1c)

3 W
1.3
1.1
TJ ,TSTG Operating and Storage Temperature Range -65 to 150 °C

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RqCA is determined by the user's board design.

Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 42℃/W when mounted on a 1 in2 pad of 2oz copper.

b. 95℃/W when mounted on a 0.066 in2 pad of 2oz copper.

c. 110℃/W when mounted on a 0.0123 in2 pad of 2oz copper.

Scale 1 : 1 on letter size paper

Stock Offer (Hot Sell)

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Product tags

p-channel mosfet sot-23

,

pnp junction transistor

,

p channel de mosfet
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NDT452AP Power Mosfet Transistor P Channel Enhancement Mode Field Effect Transistor

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Product Detail
Model Number :
NDT452AP
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
NDT452AP Power Mosfet Transistor P Channel Enhancement Mode Field Effect Transistor

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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