MachineU > China Products > Electrical Equipment & Supplies > Industrial Controls > PLC PAC And Dedicated Controllers
MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
Specifications
Model Number :
MJD112T4G
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8600pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
Bipolar (BJT) Transistor NPN - DarliCM GROUPon 100 V 2 A 25MHz 20 W Surface Mount DPAK
Collector−Emitter Voltage :
100 Vdc
Collector−Base Voltage :
100 Vdc
Emitter−Base Voltage :
5 Vdc
Base Current :
50 mAdc
Total Power Dissipation @ TC = 25°C :
20 W
Operating and Storage Junction Temperature Range :
−65 to +150 °C
Description

MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors

MJD112 (NPN)

MJD117 (PNP)

Complementary DarliCM GROUPon Power Transistors

DPAK For Surface Mount Applications

SILICON POWER TRANSISTORS

2 AMPERES

100 VOLTS

20 WATTS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Features

• Pb−Free Packages are Available

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

MAXIMUM RATINGS

Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 5 Vdc

Collector Current − Continuous

Peak

 IC

2

4

 Adc
Base Current IB 50 mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

 PD

20

0.16

W

W/°C

Total Power Dissipation* @ TA = 25°C

Derate above 25°C

 PD

1.75

0.014

W

W/°C
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

MARKING DIAGRAMS

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE O

DPAK−3

CASE 369D−01

ISSUE B

Product tags

mosfet power transistor com

,

igbt mosfet

,

darlington power transistor types
Send your message to this supplier
Send Now

MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors

Ask Latest Price
Product Detail
Model Number :
MJD112T4G
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Electronic IC Chips
MachineU China Products Electrical Equipment & Supplies Industrial Controls PLC PAC And Dedicated Controllers
Contact Supplier
Submit Requirement