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MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe
MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe
Specifications
Brand Name :
MOTOROLA
Model Number :
MLP1N06CLG
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
20pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union,PayPal
Supply Ability :
5200PCS
Delivery Time :
1 Day
Packaging Details :
please contact me for details
Description :
Power Switch/Driver 1:1 N-Channel TO-220
VDSS :
Clamped Vdc
VDGR :
Clamped Vdc
VGS :
±10 Vdc
ID :
Self–limited 1.8 Adc
PD :
40 Watts
Description

Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET

These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.

The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to– source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain avalanche stresses that occur with inductive loads. This unique design provides voltage clamping that is essentially independent of operating temperature.

• Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress Applied to the Device and Protects the Load From Overvoltage

• Integrated ESD Diode Protection

• Controlled Switching Minimizes RFI

• Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors

MAXIMUM RATINGS

Rating Symbol Value Unit
Drain–to–Source Voltage VDSS Clamped Vdc

Drain–to–Gate Voltage

(RGS = 1.0 MΩ)

 VDGR Clamped Vdc

Gate–to–Source Voltage

— Continuous

 VGS ±10 Vdc
Drain Current — Continuous Drain Current — Single Pulse

ID

IDM

 Self–limited 1.8 Adc
Total Power Dissipation PD 40 Watts
Electrostatic Discharge Voltage (Human Body Model) ESD 2.0 kV
Operating and Storage Junction Temperature Range TJ, Tstg –50 to 150 °C

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Product tags

hexfet power mosfet

,

n channel power mosfet

,

logic level power mosfet
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MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

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Product Detail
Brand Name :
MOTOROLA
Model Number :
MLP1N06CLG
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
20pcs
Price :
Negotiation
Contact Supplier
MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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