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TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor
TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor
Specifications
Model Number :
TLP734
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
6800pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
Optoisolator Transistor Output 4000Vrms 1 Channel 6-DIP
Storage temperature :
-55~125 °C
Operating temperature :
-40~100 °C
Lead soldering temperature (10 s) :
260 °C
Total package power dissipation :
250 mW
Total package power dissipation derating (Ta ≥ 25°C) :
-2.5 mW / °C
Isolation voltage :
4000 Vrms
Description

TOSHIBA Photocoupler GaAs Ired&Photo−Transistor

TLP733, TLP734

Office Machine

Household Use Equipment

Solid State Relay

Switching Power Supply

The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

TLP734 is no−base internal connection for high−EMI environments.

  • Collector−emitter voltage: 55 V (min.) 
  • Current transfer ratio: 50% (min.)
    • Rank GB: 100% (min.) 
  • UL recognized: UL1577, file no. E67349 
  • BSI approved: BS EN60065: 1994
    • Certificate no. 7364
    • BS EN60950: 1992
    • Certificate no. 7365 
  • SEMKO approved: SS4330784
    • Certificate no. 9325163, 9522142 
  • Isolation voltage: 4000 Vrms (min.) 
  • Option (D4) type
    • VDE approved: DIN VDE0884 / 06.92,
      • Certificate no. 74286, 91808
    • Maximum operating insulation voltage: 630, 890 VPK
    • Highest permissible over voltage: 6000, 8000 VPK

(Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”

7.62 mm pich 10.16 mm pich

standard type TLP×××F type 

Creepage distance : 7.0 mm (min.) 8.0 mm (min.)

Clearance : 7.0 mm (min.) 8.0 mm (min.)

Internal creepage path : 4.0 mm (min.) 4.0 mm (min.)

Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)

Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit
LED Forward current IF 60 mA
Forward current derating (Ta ≥ 39°C) ∆IF / °C  -0.7 mA / °C
Peak forward current (100 µs pulse, 100 pps) IFP 1 A
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector Collectoremitter voltage VCEO 55 V
Collectorbase voltage (TLP733) VCBO 80 V
Emittercollector voltage VECO 7 V
Emitterbase voltage (TLP733) VEBO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr  -40~100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.5 mW / °C
Isolation voltage (AC, 1 min., R.H.≤ 60%) BVS 4000 Vrms

Weight: 0.42 g

Pin Configurations (top view)

TLP733

1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base

TLP734

1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc

Product tags

irf520 mosfet

,

mosfet irf3205

,

p55nfo power mosfet
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TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

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Product Detail
Model Number :
TLP734
Certification :
new & original
Place of Origin :
original factory
MOQ :
20pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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