TC4426/TC4427/TC4428

1.5A Dual High-Speed Power MOSFET Drivers

Features:

• High Peak Output Current – 1.5A

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• High Capacitive Load Drive Capability – 1000 pF in 25 ns (typ.)

• Short Delay Times – 40 ns (typ.)

• Matched Rise and Fall Times

• Low Supply Current:

- With Logic ‘1’ Input – 4 mA

- With Logic ‘0’ Input – 400 μA

• Low Output Impedance – 7Ω

• Latch-Up Protected: Will Withstand 0.5A Reverse Current

• Input Will Withstand Negative Inputs Up to 5V

• ESD Protected – 4 kV

• Pin-compatible with the TC426/TC427/TC428

• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN Packages

Applications:

• Switch Mode Power Supplies

• Line Drivers

• Pulse Transformer Drive

General Description:

The TC4426/TC4427/TC4428 are improved versions of the earlier TC426/TC427/TC428 family of MOSFET drivers. The TC4426/TC4427/TC4428 devices have matched rise and fall times when charging and discharging the gate of a MOSFET.

These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 4 kV.

The TC4426/TC4427/TC4428 MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns. These devices provide low enough impedances in both the on and off states to ensure the MOSFET’s intended state will not be affected, even by large transients.

Other compatible drivers are the TC4426A/TC4427A/ TC4428A family of devices. The TC4426A/TC4427A/ TC4428A devices have matched leading and falling edge input-to-output delay times, in addition to the matched rise and fall times of the TC4426/TC4427/ TC4428 devices.

Absolute Maximum Ratings †

Supply Voltage .....................................................+22V

Input Voltage, IN A or IN B ..................................... (V_DD + 0.3V) to (GND – 5V)

Package Power Dissipation (T_A ≤ 70°C)

DFN .............................................................. Note 3

MSOP..........................................................340 mW

PDIP ............................................................730 mW

SOIC............................................................470 mW

Storage Temperature Range..............-65°C to +150°C

Maximum Junction Temperature...................... +150°C

† Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

Package Types

Functional Block Diagram

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