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FQP50N06 Power Mosfet Transistor npn general purpose transistor
FQP50N06 Power Mosfet Transistor npn general purpose transistor
Specifications
Model Number :
FQP50N06
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
7800pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
MOSFET N-CH 60V 50A TO220-3
Drain-Source Voltage :
60 V
Gate-Source Voltage :
± 20 V
Single Pulsed Avalanche Energy :
990 mJ
Avalanche Current :
52.4 A
Repetitive Avalanche Energy :
12.1 mJ
Peak Diode Recovery dv/dt :
7.0 V/ns
Description

Stock Offer (Hot Sell)

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STM8324 4500 SAMHOP 16+ SOP8
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FQP50N06L

60V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

• 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V

• Low gate charge ( typical 24.5 nC)

• Low Crss ( typical 90 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP50N06L Units
VDSS Drain-Source Voltage 60 V
ID

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

 52.4 A
37.1 A
IDM Drain Current - Pulsed (Note 1) 210 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ
IAR Avalanche Current (Note 1) 52.4 A
EAR Repetitive Avalanche Energy (Note 1) 12.1 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD

Power Dissipation (TC = 25°C)

- Derate above 25°C

 121 W
0.81 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C

Package Dimensions

TO-220

Product tags

p55nfo power mosfet

,

2sa1535 pnp power transistor

,

2n3055 npn transistor
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FQP50N06 Power Mosfet Transistor npn general purpose transistor

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Product Detail
Model Number :
FQP50N06
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
FQP50N06 Power Mosfet Transistor npn general purpose transistor

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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