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STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
Specifications
Model Number :
STGB7NC60HDT4
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
7800pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
IGBT 600 V 25 A 80 W Surface Mount D2PAK
Collector-Emitter Voltage :
600 V
Emitter-Collector Voltage :
20 V
Gate-Emitter Voltage :
±20 V
Collector Current (pulsed) :
50 A
Diode RMS Forward Current at TC = 25°C :
20 A
Storage Temperature :
– 55 to 150 °C
Operating Junction Temperature :
– 55 to 150 °C
Total Dissipation at TC = 25°C :
80 W
Description

Stock Offer (Hot Sell)

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STGP7NC60HD

STGF7NC60HD - STGB7NC60HD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK

Very Fast PowerMESH™ IGBT

■ LOWER ON-VOLTAGE DROP (Vcesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY ENERGY

■ LOWER CRES/CIES RATIO

■ HIGH FREQUENCY OPERATION UP TO 70 KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Absolute Maximum ratings

Symbol Parameter Value Unit

STGP7NC60HD

STGB7NC60HD

 STGF7NC60HD
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 20 V
VGE Gate-Emitter Voltage ±20 V
IC Collector Current (continuous) at TC = 25°C (#) 25 10 A
IC Collector Current (continuous) at TC = 100°C (#) 14 6 A
ICM (1) Collector Current (pulsed) 50 A
IF Diode RMS Forward Current at TC = 25°C 20 A
PTOT Total Dissipation at TC = 25°C 80 25 W
Derating Factor 0.64 0.20 W/°C
VISO

Insulation Withstand Voltage A.C.

(t = 1 sec; Tc = 25°C)

 - 2500 V
Tstg Storage Temperature – 55 to 150 °C
Tj Operating Junction Temperature

(1) Pulse width limited by max. junction temperature.

Figure 1: Package

Figure 2: Internal Schematic Diagram

Product tags

mosfet igbt

,

power mosfet model

,

igbt mosfet
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STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

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Product Detail
Model Number :
STGB7NC60HDT4
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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